CMPTA46-TR datasheet, PDF - EEWORLD Datasheet

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CMPTA46-TR: DescriptionBipolar Transistors - Pre-Biased NPN 100mA 50V w/bias resistor; Categorysemiconductor Discrete semiconductor; File Size393KB，3 Pages; ManufacturerCentral Semiconductor

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CMPTA46-TR Overview

Bipolar Transistors - Pre-Biased NPN 100mA 50V w/bias resistor

CMPTA46-TR Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Central Semiconductor
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	450 V
Collector- Base Voltage VCBO	450 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	200 mV
Maximum DC Collector Current	500 mA
Gain Bandwidth Product fT	20 MHz
Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	50 at 10 mA at 10 V
DC Current Gain hFE Max	200 at 10 mA at 10 V
Minimum Operating Temperature	- 65 C
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Pd - Power Dissipation	350 mW
Factory Pack Quantity	3000
Unit Weight	0.000282 oz

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CMPTA46

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA46 type

is a surface mount epoxy molded NPN silicon planar

epitaxial transistor designed for extremely high voltage

applications.

MARKING CODE: C46

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

UNITS

V

mA

mW

°C

°C/W

450

6.0

500

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=400V

IEBO

VBE=4.0V

BVCBO

IC=100µA

450

610

BVCEO

IC=1.0mA

450

490

BVEBO

IE=10µA

6.0

8.7

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

IC=1.0mA, IB=0.1mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V, IC=50mA

VCE=10V, IC=100mA

VCE=10V, IC=10mA, f=10MHz

VCB=20V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

40

50

45

25

20

MAX

100

UNITS

nA

V

0.20

0.15

108

110

95

35

0.30

0.50

1.0

200

MHz

7.0

130

pF

R5 (3-February 2010)

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