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AUIRGP66524D0

Description
JFET 600V COOLiRIGBT
Categorysemiconductor    Discrete semiconductor   
File Size964KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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AUIRGP66524D0 Overview

JFET 600V COOLiRIGBT

AUIRGP66524D0 Parametric

Parameter NameAttribute value
Product CategoryJFET
ManufacturerInfineon
RoHSDetails
PackagingTube
Factory Pack Quantity25
TypeJFET
 
AUTOMOTIVE GRADE
AUIRGP66524D0
AUIRGF66524D0
COOLiRIGBT
™ 
V
CES
= 600V
I
NOMINAL
= 24A
Tsc
6µs,
T
J(MAX)
= 175°C
V
CE(ON)
typ. = 1.60V
Applications
Air Conditioning Compressor
Auxiliary Motor Drive
Features
Low V
CE(on)
Trench IGBT Technology
Low Switching Losses
6µs SCSOA Guaranteed
Square RBSOA and 100% Clamp IL Tested
Positive V
CE(on)
Temperature Coefficient
Ultra Fast Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant, Automotive Qualified *
Base Part Number
 
AUIRGP66524D0
AUIRGF66524D0
 
TO-247AC
TO-247AD
Package Type
G
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
 
C
 
GC
E
E
G
CE
n-channel
TO-247AC
AUIRGP66524D0
TO-247AD
AUIRGF66524D0
G
Gate
C
Collector
E
Emitter
Benefits
 
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies
Enables Short Circuit Protection Scheme
Rugged Hard Switching Operation
Enables Easy Paralleling of Devices
Better Efficiency and Improved EMI Performance
Environmentally Friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP66524D0
AUIRGF66524D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
Nominal
Nominal Collector Current
24
I
C
@ T
C
= 25°C
Continuous Collector Current
60
I
C
@ T
C
= 100°C
Continuous Collector Current
40
A
I
CM
Pulse Collector Current, V
GE
= 15V
72
I
LM
Clamped Inductive Load Current, V
GE
= 20V
96
I
F
@ T
C
= 25°C
Diode Continous Forward Current
55
I
F
@ T
C
= 100°C
Diode Continous Forward Current
35
I
FM
Diode Maximum Forward Current
72
V
GE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
dV/dt
Maximum Voltage Transient
15
V/ns
P
D
@ T
C
= 25°C
Maximum Power Dissipation
214
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
107
-55 to +175
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
 
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Qualification standards can be found at
http://www.irf.com/
 
1
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
October 10, 2014
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