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BZM55B56-TR

Description
Crystals SMD 32.768kHz Tuning Forks 12.5pF
Categorysemiconductor    Discrete semiconductor   
File Size109KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZM55B56-TR Overview

Crystals SMD 32.768kHz Tuning Forks 12.5pF

BZM55B56-TR Parametric

Parameter NameAttribute value
Product CategoryZener Diodes
ManufacturerVishay
RoHSDetails
Vz - Zener Voltage56 V
Mounting StyleSMD/SMT
Package / CaseMicroMELF-2
Pd - Power Dissipation500 mW (1/2 W)
Voltage Tolerance2 %
Voltage Temperature Coefficient0.12 %/K
Zener Current100 nA
Zz - Zener Impedance135 Ohms
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Test Current2.5 mA
PackagingCut Tape
PackagingMouseReel
PackagingReel
Diameter1.2 mm
Ir - Reverse Current100 nA
Length2 mm
ProductZener Diodes
Factory Pack Quantity2500
Termination StyleMELF
TypeVoltage Regulator
Vf - Forward Voltage1.5 V
Unit Weight0.004762 oz
BZM55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..series, TZM..series
• Fits onto SOD-323
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZM55-series
BZM55-series
ORDERING CODE
BZM55-series-TR3
BZM55-series-TR
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
2500 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
12 500
PACKAGE
PACKAGE NAME
MicroMELF
WEIGHT
12 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Junction to ambient air
Junction tie point
Junction temperature
Storage temperature range
Zener current
Forward voltage
I
F
= 200 mA
TEST CONDITION
R
thJA
300 K/W
Mounted on epoxy-glass hard tissue, fig. 1
35 μm copper clad, 0.9 mm
2
copper area per
electrode
SYMBOL
P
tot
R
thJA
R
thJL
T
j
T
stg
I
Z
V
F
VALUE
500
500
300
175
- 65 to + 175
P
tot
/V
Z
1.5
UNIT
mW
K/W
K/W
°C
°C
mA
V
Rev. 2.1, 25-Nov-11
Document Number: 85597
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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