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1N7039CCT1

Description
Schottky Diodes u0026 Rectifiers Schottky Rectifier
CategoryDiscrete semiconductor    diode   
File Size401KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N7039CCT1 Overview

Schottky Diodes u0026 Rectifiers Schottky Rectifier

1N7039CCT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY POWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Maximum non-repetitive peak forward current180 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current17.5 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
1N7039CCT1
Silicon Dual Schottky Power Rectifier
35 Amp, 150 Volt
Qualified per MIL-PRF-19500/737
DESCRIPTION
This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability
applications. They are hermetically sealed in a common cathode configuration offering very
fast switching characteristics compared to fast or ultrafast rectifiers.
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
TO-254AA Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered equivalent of 1N7039
Hermetically isolated TO-254AA package
Internal metallurgical bonds
Temperature independent switching behavior
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/737
RoHS compliant versions available (commercial grade only)
Also available in:
TO-257AA package
(leaded)
1N7047CCT3
U1 (SMD-1) package
(surface mount)
1N7039CCU1
APPLICATIONS / BENEFITS
Schottky barrier rectifier diodes (dual) for military, space and other high reliability applications
Switching power supplies or other applications requiring extremely fast switching and essentially no
switching losses.
Low forward voltage drop
High forward surge capability
Inherently radiation hard >100 krads as described in
MicroNote 050
MAXIMUM RATINGS
@ T
A
= +25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
(2.3
o
C/W maximum)
Symbol
T
J
and T
STG
R
ӨJC
V
RWM
C
J
I
O
I
FSM
Value
-65 to +150
1.9
150
350
35
180
Unit
o
C
C/W
V
pF
A
A
o
Working Peak Reverse Voltage
Junction Capacitance
o
Average DC Output Current @ T
C
= +100 C
Non-Repetitive Sinusoidal Surge Current @ t
p
= 8.3 ms,
o
T
C
= +25 C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0321, Rev. 1 (10/23/13)
©2013 Microsemi Corporation
Page 1 of 5

1N7039CCT1 Related Products

1N7039CCT1 1N7039CCT1E3 JANTX1N7039CCT1 JAN1N7039CCT1 JANTXV1N7039CCT1
Description Schottky Diodes u0026 Rectifiers Schottky Rectifier Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 150V V(RRM), Silicon, TO-254AA, DIODE SCHOTTKY 150V 35A TO254 DIODE SCHOTTKY 150V 35A TO254 DIODE SCHOTTKY 150V 35A TO254
Is it Rohs certified? incompatible conform to incompatible incompatible incompatible
Reach Compliance Code compliant compli unknown compliant unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS
application FAST RECOVERY POWER FAST RECOVERY POWER EFFICIENCY FAST RECOVERY POWER EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code R-MSFM-P3 R-MSFM-P3 S-XSFM-P3 R-MSFM-P3 S-XSFM-P3
Maximum non-repetitive peak forward current 180 A 180 A 180 A 180 A 180 A
Number of components 2 2 2 2 2
Phase 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum output current 17.5 A 17.5 A 35 A 17.5 A 35 A
Package body material METAL METAL UNSPECIFIED METAL UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR SQUARE RECTANGULAR SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 150 V 150 V 150 V 150 V 150 V
surface mount NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
ECCN code EAR99 EAR99 EAR99 - EAR99
Maximum forward voltage (VF) 1.6 V 1.6 V - 1.6 V -
Maximum operating temperature 150 °C 150 °C - 150 °C -
Minimum operating temperature -65 °C -65 °C - -65 °C -
Maximum reverse current 500 µA 500 µA - 500 µA -
Base Number Matches 1 1 - 1 -
package instruction - R-MSFM-P3 HERMETIC SEALED PACKAGE-3 R-MSFM-P3 HERMETIC SEALED PACKAGE-3
JESD-609 code - - e0 e0 e0
Certification status - - Qualified Qualified Qualified
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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