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BLF3G21-6112

Description
RF MOSFET Transistors LDMOS TNS
Categorysemiconductor    Discrete semiconductor   
File Size955KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF3G21-6112 Overview

RF MOSFET Transistors LDMOS TNS

BLF3G21-6112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityP-Channel
Id - Continuous Drain Current2.3 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance2.07 Ohms
TechnologySi
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseCDIP SMT
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Height2.95 mm
Length5.66 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity160
TypeRF Power MOSFET
Vgs - Gate-Source Voltage+/- 13 V
Width4.14 mm
BLF3G21-6
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1.
Typical class-AB RF performance
I
Dq
= 90 mA; T
h
= 25
C in a common source test circuit.
Mode of operation
CW
Two-tone
f
(MHz)
2000
2000
P
L
(W)
7
6
<2
Table 2.
Typical class-A RF performance
I
Dq
= 200 mA; T
h
= 25
C in a modified PHS test fixture.
Mode of operation
PHS
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(MHz)
1880 to 1920
P
L(AV)
(W)
2
G
p
(dB)
16
D
(%)
20
ACPR
600k
(dBc)
75
G
p
(dB)
12.5
15.5
15.8
D
(%)
43
39
-
IMD3
(dB)
-
32
<
50
P
L(1dB)
(W)
7
-
-
1.2 Features and benefits
Excellent back-off linearity
Typical PHS performance at a supply voltage of 26 V and I
Dq
of 200 mA:
Average output power = 2 W
Power gain = 16 dB
Efficiency = 20 %
ACPR
600k
=
75
dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)

BLF3G21-6112 Related Products

BLF3G21-6112 BLF3G21-6135
Description RF MOSFET Transistors LDMOS TNS RF MOSFET Transistors TRANSISTOR UHF PWR LDMOS
Product Category RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP
RoHS Details Details
Transistor Polarity P-Channel N-Channel
Id - Continuous Drain Current 2.3 A 2.3 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Technology Si Si
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case CDIP SMT SOT-538A
Configuration Single Single
Factory Pack Quantity 160 500
Type RF Power MOSFET RF Power MOSFET
Vgs - Gate-Source Voltage +/- 13 V +/- 13 V
Packaging Tube Cut Tape
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