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AUIRFR48ZTRR

Description
MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
CategoryDiscrete semiconductor    The transistor   
File Size663KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRFR48ZTRR Overview

MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms

AUIRFR48ZTRR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)42 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)91 W
surface mountYES
Base Number Matches1
AUTOMOTIVE GRADE
 
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFR48Z
HEXFET
®
Power MOSFET
 
V
DSS
R
DS(on)
I
D (Silicon Limited)
I
D (Package Limited)
D
55V
max.
11m
62A
42A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
D-Pak
AUIRFR48Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFR48Z
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR48Z
AUIRFR48ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
62
44
42
250
91
0.61
± 20
74
110
See Fig.15,16, 12a, 12b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
 
300
Thermal Resistance
 
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.64
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-12-1

AUIRFR48ZTRR Related Products

AUIRFR48ZTRR AUIRFR48Z AUIRFR48ZTRL
Description MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code compliant compliant compliant
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 42 A 42 A 42 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 91 W 91 W 91 W
surface mount YES YES YES
Base Number Matches 1 1 -
package instruction - ROHS COMPLIANT, PLASTIC, DPAK-3 ROHS COMPLIANT, PLASTIC, DPAK-3
ECCN code - EAR99 EAR99
Factory Lead Time - 26 weeks 16 weeks
Other features - AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) - 110 mJ 110 mJ
Shell connection - DRAIN DRAIN
Minimum drain-source breakdown voltage - 55 V 55 V
Maximum drain current (ID) - 42 A 42 A
Maximum drain-source on-resistance - 0.011 Ω 0.011 Ω
JEDEC-95 code - TO-252AA TO-252AA
JESD-30 code - R-PSSO-G2 R-PSSO-G2
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 2 2
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Maximum pulsed drain current (IDM) - 250 A 250 A
Certification status - Not Qualified Not Qualified
Terminal surface - Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - 30 30
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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