AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
MIE-534A4
Unit: mm ( inches )
Package Dimensions
φ
5.05
(.199)
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
SEE NOTE 2
l
l
l
l
l
1.00
(.039)
High radiant power and high radiant intensity
FLAT DENOTES CATHODE
Suitable for DC and high pulse current operation
Standard T-1 3/4 (
φ
5mm ) package, radiant angle : 30°
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@
@
A
=25
o
C
T
T
A
=25
o
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/20/2000
MIE-534A4
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
Relative Radiant Intensity
Test Conditions
I
F
=20mA
I
F
=50mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
Symbol
Ie
V
F
I
R
λ
∆λ
2θ
1/2
Min.
2.0
Typ .
3.5
1.30
940
50
30
Max.
1.5
100
Unit
mW/sr
V
µA
nm
nm
deg .
Typical Optical-Electrical Characteristic Curves
Forward Current I
F
(mA)
1
100
90
80
70
60
50
0
-55 -25
0
25
50
75 100 125
0.5
0
840
940
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Forward Current (mA)
Output Power To Value
I =20mA
100
80
60
40
20
0
0.8
1.2
1.6
2.0
2.4
2.8
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
o
60
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Output Power Relative To
Value at I
F
=20mA
5
4
3
2
1
0
0
20
40
60
80
100
Ambient Temperature T
A
( C)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Relative Radiant Intensity
0° 10°
20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
50°
60°
70°
80°
90°
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.6 RADIANTION DIAGRAM
Unity Opto Technology Co., Ltd.
11/20/2000
Microcontroller MCU
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