T-1 PACKAGE
NPN PHOTOTRANSISTOR
Description
The MID-33422 is a NPN silicon phototransistor moun-
nted in a lensed, water clear plastic package and
suitable for the variety wavelength.
1.00
(.040)
5.25
(.207)
MID-33422
Package Dimensions
φ
3.00
(.118)
Unit: mm (inches)
4.00
(.157)
SEE NOTE 2
0.80±0.50
(.032±.020)
FLAT DENOTES COLLECTOR
23.40 MIN.
(.920)
Features
l
l
l
l
l
Wide range of collector current
Lensed for high sensitivity
Low cost plastic package
Suitable for the variety wavelength
Acceptance view angle : 30
o
0.50 TYP.
(.020)
1.00 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
E
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted .
2. Protruded resin under flange is 0.5 mm (.019") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
V
Unity Opto Technology Co., Ltd.
02/04/2002
MID-33422
Optical-Electrical Characteristics
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Iceo-Collector Dark Current -
µ
A
Test Conditions
I
c
=0.1mA
Ee=0
Ie=0.1mA
Ee=0
I
c
=0.5mA
Ee=0.1mW/cm
2
V
CC
=5V, R
L
=1KΩ
I
C
=1mA
V
CE
=10V
Ee=0
V
CE
=5V
Ee=0.1mW/cm
2
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
Min.
30
5
Typ .
Max.
@ T
A
=25
o
C
Unit
V
V
0.4
15
15
100
2.4
V
µS
nA
mA
1000
100
10
1
0.1
0.01
0.001
0
40
80
120
I
C
Normalized Collector Current
Typical Optical-Electrical Characteristic Curves
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vce = 5
V
Ee = 0.1 mW/cm
2
@λ= 940 nm
-75
-25
25
75
125
200
160
120
80
40
0
0
Relative Collector Current (mA)
Tr Tf Rise and Fall Time -
µ
S
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COL
LECTOR CURRENT
10
8
6
4
2
0
0
0.1
0.2
0.3
0.4
0.5
2
Vce = 5 V
2
4
6
8
10
Relative Spectral Sensitivity
R
L
- Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
100
80
60
40
20
0
400
575
750
925
1100
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
50°
60°
70°
80°
90°
FIG.5 RELATIVE SPECTRAL SENSITIVITY S
REL
=f(λ)
Relative Sensitivity
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
Microcontroller MCU
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