SILICON NPN EPITAXIAL PLANAR TYPE
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.04 A |
| Collector-based maximum capacity | 1.15 pF |
| Collector-emitter maximum voltage | 5 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 80 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 7000 MHz |
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