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MRF5S19130R3

Description
N-Channel Enhancement-Mode Lateral MOSFETs
CategoryDiscrete semiconductor    The transistor   
File Size412KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF5S19130R3 Overview

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19130R3 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Manufacturer packaging codeCASE 465B-03
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)324 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19130/D
MRF5S19130R3
RF Power Field Effect Transistors MRF5S19130SR3
The RF MOSFET Line
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 26 Watts Avg.
Power Gain — 13 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 51 dB
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Qualified Up to a Maximum of 32 V Operation
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
324
1.85
- 65 to +150
200
110
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package.
1990 MHz, 26 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130SR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 110 W CW
Case Temperature 80°C, 26 W CW
Symbol
R
θJC
Max
0.54
0.60
Unit
°C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
MRF5S19130R3 MRF5S19130SR3
1
ARCHIVE INFORMATION

MRF5S19130R3 Related Products

MRF5S19130R3 MRF5S19130SR3
Description N-Channel Enhancement-Mode Lateral MOSFETs N-Channel Enhancement-Mode Lateral MOSFETs
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2
Contacts 2 2
Manufacturer packaging code CASE 465B-03 CASE 465C-02
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band L BAND L BAND
JESD-30 code R-CDFM-F2 R-CDFP-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLATPACK
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 324 W 324 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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