MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19130/D
MRF5S19130R3
RF Power Field Effect Transistors MRF5S19130SR3
The RF MOSFET Line
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 26 Watts Avg.
Power Gain — 13 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 51 dB
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V Operation
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
324
1.85
- 65 to +150
200
110
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package.
1990 MHz, 26 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130SR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 110 W CW
Case Temperature 80°C, 26 W CW
Symbol
R
θJC
Max
0.54
0.60
Unit
°C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
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MRF5S19130R3 MRF5S19130SR3
1
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M4 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale
ARCHIVE
Semiconductor, Inc.
INFORMATION
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.8
0.26
7.5
3.5
—
—
—
Vdc
Vdc
Vdc
S
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 26 W Avg, I
DQ
= 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 26 W Avg, I
DQ
= 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 26 W Avg, I
DQ
= 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 26 W Avg, I
DQ
= 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 26 W Avg, I
DQ
= 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
(1) Part is internally matched both on input and output.
G
ps
12
13
—
dB
η
23
25
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 15
-9
dB
MRF5S19130R3 MRF5S19130SR3
For More Information On This Product,
2
MOTOROLA RF DEVICE DATA
Go to: www.freescale.com
ARCHIVE INFORMATION
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
µAdc
Freescale Semiconductor, Inc.
B1
R1
V
GG
+
C10
R2
+
C9
C6
C7
C8
C15
Z13
RF
INPUT
Z10
Z1
C1
C2
C3
C4
C5
B2
Z11
Z2
Z3
Z4 Z5 Z6 Z7
Z8 Z9
Z14
DUT
Z12
Z15 Z16 Z17 Z18 Z19 Z20 Z21
C25
RF
Z22 Z23 Z24 OUTPUT
R3
+
C16
C17
C18
C19
C20
+
C21
+
C22
+
C23
+
C24
V
DD
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
C11
C12
C14
C13
C26
C27
C28
C29
C30
C31
C32
C33
C34
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10, Z11
Z12
0.200″
0.170″
0.480″
0.926″
0.590″
0.519″
0.022″
0.046″
0.080″
1.280″
0.053″
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.955″
x 0.955″
x 0.955″
x 0.955″
x 0.046″
x 1.080″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.160″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z13, Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
1.125″ x 0.068″ Microstrip
0.071″ x 1.080″ Microstrip
0.060″ x 1.080″ Microstrip
0.290″ x 1.080″ Microstrip
1.075″ x 0.825″ x 0.125″ Taper
0.635″ x 0.120″ Microstrip
0.185″ x 0.096″ Microstrip
0.414″ x 0.084″ Microstrip
0.040″ x 0.084″ Microstrip
0.199″ x 0.057″ Microstrip
Arlon GX0300 - 55 - 22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S19130R3(SR3) Test Circuit Schematic
Table 1. MRF5S19130R3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1
C2, C4
C3
C5
C8, C13
C9, C11
C10
C6, C14, C17, C18, C19, C28, C29, C30
C7, C12, C16, C27
C15, C26
C20, C21, C22, C23, C31, C32, C33, C34
C24
C25
R1
R2
R3, R4
Description
Short RF Bead
0.8 pF Chip Capacitor, B Case
0.6 – 4.5 pF Gigatrim Variable Capacitors
2.2 pF Chip Capacitor, B Case
1.7 pF Chip Capacitor, B Case
9.1 pF Chip Capacitors, B Case
1
µF,
25 V Tantalum Capacitors
47
µF,
50 V Electrolytic Capacitor
0.1
µF
Chip Capacitors, B Case
1000 pF Chip Capacitors, B Case
8.2 pF Chip Capacitors, B Case
22
µF,
35 V Tantalum Capacitors
470
µF,
63 V Electrolytic Capacitor
6.2 pF Chip Capacitor, B Case
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Value, P/N or DWG
95F786
100B0R8BP 500X
44F3358
100B2R2BP 500X
100B1R7BP 500X
100B9R1CP 500X
92F1845
51F2913
CDR33BX104AKWS
100B102JP 500X
100B8R2CP 500X
92F1853
95F4579
100B6R2CP 500X
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
Newark
ATC
ATC
ATC
Newark
Newark
Kemet
ATC
ATC
Newark
Newark
ATC
Newark
Newark
Garrett Electtonics
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
3
For More Information On This Product,
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ARCHIVE INFORMATION
+
R4
+
+
+
+
Freescale Semiconductor, Inc.
C18
C10
R1
V
GG
C16
R2
C9
C7
C17
C6
C22 C23
B1
R3
C8
V
DD
MRF5S19130
Rev 5
C15
C19
C20 C21
C24
C1
C2
C3
C4
C5
C11
C14
C12
CUT OUT AREA
C25
Freescale
ARCHIVE
Semiconductor, Inc.
INFORMATION
C28
C27
B2
R4
C13
C26
C29 C30
C31 C32
Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout
MRF5S19130R3 MRF5S19130SR3
For More Information On This Product,
4
MOTOROLA RF DEVICE DATA
Go to: www.freescale.com
ARCHIVE INFORMATION
C33 C34
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
−25
−30
15
14
G ps , POWER GAIN (dB)
13
12
11
10
9
8
7
6
ACPR
IM3
IRL
G
ps
η
V
DD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
−10
−20
−30
−40
−50
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
15
G ps , POWER GAIN (dB)
14
1500 mA
13
12
11
600 mA
10
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
1200 mA
900 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
I
DQ
= 1800 mA
−25
−30
−35
I
DQ
= 1800 mA
−40
600 mA
−45
−50
−55
900 mA
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
1200 mA
1500 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
−50
−55
−60
0.1
7th Order
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1
TWO−TONE SPACING (MHz)
10
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
60
59
58
57
56
55
54
53
52
51
50
49
48
35
36
37
38
P3dB = 53.11 dBm (205.57 W)
P1dB = 52.54 dBm (179.61 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8
µsec
(on), 1 msec (off)
Center Frequency = 1960 MHz
39
40
41
42
43
44
45
Ideal
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
5
For More Information On This Product,
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ARCHIVE INFORMATION
5
−60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
IRL, INPUT RETURN LOSS (dB)
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