AT52BR1664AT datasheet, PDF - EEWORLD Datasheet

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AT52BR1664AT: Description16-megabit Flash + 4-megabit SRAM Stack Memory; File Size268KB，35 Pages; ManufacturerAtmel (Microchip)

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AT52BR1664AT Overview

16-megabit Flash + 4-megabit SRAM Stack Memory

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Features

•

16-Mbit (x16) Flash and 4-megabit SRAM

•

2.7V to 3.3V Operating Voltage

•

Low Operating Power

– 40 mA Operating Current (Maximum)

– 35 µA Standby Current (Maximum)

•

Industrial Temperature Range

Flash

•

2.7V to 3.3V Read/Write

•

Access Time – 70 ns, 90 ns

•

Sector Erase Architecture

•

– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

Fast Word Program Time – 12 µs

Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase of a

Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

Low-power Operation

– 12 mA Active

– 13 µA Standby

Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

VPP Pin for Write Protection and Accelerated Program/Erase Operations

RESET Input for Device Initialization

Sector Lockdown Support

Top/Bottom Boot Block Configuration

128-bit Protection Register

Minimum 100,000 Erase Cycles

•

16-megabit

Flash +

4-megabit

SRAM Stack

Memory

AT52BR1664A

AT52BR1664AT

SRAM

•

4-megabit (256K x 16)

2.7V to 3.3V V

Operating Voltage

70 ns Access Time

Fully Static Operation and Tri-state Output

1.2V (Min) Data Retention

Device Number

AT52BR1664A(T)

Flash Configuration

16M (1M x 16)

SRAM Configuration

4M (256K x 16)

Rev. 3361C–STKD–1/04

AT52BR1664A(T)

16-Mbit Flash

Description

The 16-Mbit Flash is organized as 1,048,576 words of 16 bits each. The x16 data appears on

I/O0 - I/O15. The memory is divided into 39 sectors for erase operations. The device has CE

and OE control signals to avoid any bus contention. This device can be read or reprogrammed

using a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the device in

other operation modes such as program and erase. The device has the capability to protect

the data in any sector (see “Sector Lockdown” section).

To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend

feature. This feature will put the erase or program on hold for any amount of time and let the

user read data from or program data to any of the remaining sectors within the memory. The

end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by

the toggle bit.

The VPP pin provides data protection. When the V

input is below 0.4V, the program and

erase functions are inhibited. When V

is at 0.9V or above, normal program and erase opera-

tions can be performed.

A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement

of entering the three-byte program sequence is offered to further improve programming time.

After entering the six-byte code, only single pulses on the write control lines are required for

writing into the device. This mode (Single Pulse Word Program) is exited by powering down

the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back

to V

. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not

work while in this mode; if entered they will result in data being programmed into the device. It

is not recommended that the six-byte code reside in the software of the final product but only

exist in external programming code.

3361C–STKD–1/04

AT52BR1664AT Related Products

	AT52BR1664AT	AT52BR1664A-70CI	AT52BR1664A	AT52BR1664A-90CI	AT52BR1664AT-90CI	AT52BR1664AT-70CI
Description	16-megabit Flash + 4-megabit SRAM Stack Memory	16-megabit Flash + 4-megabit SRAM Stack Memory	16-megabit Flash + 4-megabit SRAM Stack Memory	16-megabit Flash + 4-megabit SRAM Stack Memory	16-megabit Flash + 4-megabit SRAM Stack Memory	16-megabit Flash + 4-megabit SRAM Stack Memory
Is it lead-free?	-	Contains lead	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	-	incompatible	incompatible	incompatible
Maker	-	Atmel (Microchip)	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	-	BGA	-	BGA	BGA	BGA
package instruction	-	TFBGA, BGA66,8X12,32	-	TFBGA, BGA66,8X12,32	TFBGA, BGA66,8X12,32	TFBGA, BGA66,8X12,32
Contacts	-	66	-	66	66	66
Reach Compliance Code	-	compli	-	compli	compli	compli
Maximum access time	-	70 ns	-	90 ns	90 ns	70 ns
Other features	-	SRAM IS ORGANISED AS 256K X 16	-	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16
JESD-30 code	-	R-PBGA-B66	-	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66
JESD-609 code	-	e0	-	e0	e0	e0
length	-	10 mm	-	10 mm	10 mm	10 mm
memory density	-	16777216 bi	-	16777216 bi	16777216 bi	16777216 bi
Memory IC Type	-	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	-	16	-	16	16	16
Mixed memory types	-	FLASH+SRAM	-	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
Number of functions	-	1	-	1	1	1
Number of terminals	-	66	-	66	66	66
word count	-	1048576 words	-	1048576 words	1048576 words	1048576 words
character code	-	1000000	-	1000000	1000000	1000000
Operating mode	-	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	85 °C	-	85 °C	85 °C	85 °C
Minimum operating temperature	-	-40 °C	-	-40 °C	-40 °C	-40 °C
organize	-	1MX16	-	1MX16	1MX16	1MX16
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	TFBGA	-	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	-	BGA66,8X12,32	-	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32
Package shape	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	240	-	240	240	240
power supply	-	3 V	-	3 V	3 V	3 V
Certification status	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm
Maximum slew rate	-	0.04 mA	-	0.04 mA	0.04 mA	0.04 mA
Maximum supply voltage (Vsup)	-	3.3 V	-	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	-	2.7 V	-	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	-	3 V	-	3 V	3 V	3 V
surface mount	-	YES	-	YES	YES	YES
technology	-	CMOS	-	CMOS	CMOS	CMOS
Temperature level	-	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	BALL	-	BALL	BALL	BALL
Terminal pitch	-	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	30	-	30	30	30
width	-	8 mm	-	8 mm	8 mm	8 mm

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