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GIB2404

Description
16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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GIB2404 Overview

16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
GIB2401 THRU GIB2404
GLASS PASSIVATED PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.047 (1.19)
0.055 (1.40)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
Forward Current -
16.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive centertap
Glass passivated chip junctions
Low power loss
High surge capability
Superfast recovery times for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GIB2401
GIB2402
GIB2403
GIB2404
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
=125°C
Maximum instantaneous forward voltage per leg at:
I
F
=4A, T
J
=25°C
I
F
=8A, T
J
=25°C
I
F
=4A, T
J
=100°C
I
F
=8A, T
J
=100°C
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance per leg
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case per leg mounted on heatsink
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
16.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
I
FSM
125.0
Amps
V
F
0.975
0.900
0.800
0.895
50.0
150.0
35.0
85.0
2.2
-65 to +150
5.0
500.0
Volts
T
C
=25°C
T
C
=100°C
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
µA
ns
pF
°C/W
°C
Maximum reverse recovery time per leg
(NOTE1)
4/98

GIB2404 Related Products

GIB2404 GIB2401 GIB2402 GIB2403
Description 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB
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