SD1100C32C datasheet, PDF - EEWORLD Datasheet

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SD1100C32C: Description1100 A, 3200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size97KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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SD1100C32C Overview

1100 A, 3200 V, SILICON, RECTIFIER DIODE

SD1100C32C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	O-CEDB-N2
Contacts	2
Manufacturer packaging code	B-43
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH SURGE CAPABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.44 V
JESD-30 code	O-CEDB-N2
JESD-609 code	e0
Maximum non-repetitive peak forward current	11000 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	1100 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	3200 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

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Bulletin I2072/B

SD1100C..C SERIES

STANDARD RECOVERY DIODES

Hockey Puk Version

Features

Wide current range

High voltage ratings up to 3200V

High surge current capabilities

Diffused junction

Hockey Puk version

Case style B-43

1400A

Typical Applications

Converters

Power supplies

Machine tool controls

High power drives

Medium traction applications

case style B-43

Major Ratings and Characteristics

SD1100C..C

Parameters

F(AV)

@ T

F(RMS)

@ T

FSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

RRM

range

04 to 20

1400

2500

13000

13600

846

772

400 to 2000

- 40 to 180

25 to 32

1100

2000

10500

11000

551

503

2500 to 3200

- 40 to 150

Units

°C

SD1100C32C Related Products

	SD1100C32C	SD1100C04C	SD1100C08C	SD1100C12C	SD1100C16C	SD1100C20C	SD1100C25C	SD1100C30C	SD1100C1111
Description	1100 A, 3200 V, SILICON, RECTIFIER DIODE	1400 A, 400 V, SILICON, RECTIFIER DIODE	1400 A, 800 V, SILICON, RECTIFIER DIODE	1400 A, 1200 V, SILICON, RECTIFIER DIODE	1400 A, 1600 V, SILICON, RECTIFIER DIODE	1400 A, 2000 V, SILICON, RECTIFIER DIODE	1100 A, 2500 V, SILICON, RECTIFIER DIODE	1100 A, 3000 V, SILICON, RECTIFIER DIODE	1400 A, 400 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-
package instruction	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	-
Contacts	2	2	2	2	2	2	2	2	-
Manufacturer packaging code	B-43	B-43	B-43	B-43	B-43	B-43	B-43	B-43	-
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	-
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
Other features	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	HIGH SURGE CAPABILITY	-
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.44 V	1.31 V	1.31 V	1.31 V	1.31 V	1.31 V	1.44 V	1.44 V	-
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	-
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	-
Maximum non-repetitive peak forward current	11000 A	13600 A	13600 A	13600 A	13600 A	13600 A	11000 A	11000 A	-
Number of components	1	1	1	1	1	1	1	1	-
Phase	1	1	1	1	1	1	1	1	-
Number of terminals	2	2	2	2	2	2	2	2	-
Maximum operating temperature	150 °C	180 °C	180 °C	180 °C	180 °C	180 °C	150 °C	150 °C	-
Maximum output current	1100 A	1400 A	1400 A	1400 A	1400 A	1400 A	1100 A	1100 A	-
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum repetitive peak reverse voltage	3200 V	400 V	800 V	1200 V	1600 V	2000 V	2500 V	3000 V	-
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	-
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-
Terminal location	END	END	END	END	END	END	END	END	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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