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SD1100C08C

Description
1400 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size97KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

SD1100C08C Overview

1400 A, 800 V, SILICON, RECTIFIER DIODE

SD1100C08C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionO-CEDB-N2
Contacts2
Manufacturer packaging codeB-43
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH SURGE CAPABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.31 V
JESD-30 codeO-CEDB-N2
JESD-609 codee0
Maximum non-repetitive peak forward current13600 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Maximum output current1400 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Bulletin I2072/B
SD1100C..C SERIES
STANDARD RECOVERY DIODES
Hockey Puk Version
Features
Wide current range
High voltage ratings up to 3200V
High surge current capabilities
Diffused junction
Hockey Puk version
Case style B-43
1400A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
case style B-43
Major Ratings and Characteristics
SD1100C..C
Parameters
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
04 to 20
1400
55
2500
25
13000
13600
846
772
400 to 2000
- 40 to 180
25 to 32
1100
55
2000
25
10500
11000
551
503
2500 to 3200
- 40 to 150
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
°C

SD1100C08C Related Products

SD1100C08C SD1100C04C SD1100C12C SD1100C16C SD1100C20C SD1100C25C SD1100C30C SD1100C32C SD1100C1111
Description 1400 A, 800 V, SILICON, RECTIFIER DIODE 1400 A, 400 V, SILICON, RECTIFIER DIODE 1400 A, 1200 V, SILICON, RECTIFIER DIODE 1400 A, 1600 V, SILICON, RECTIFIER DIODE 1400 A, 2000 V, SILICON, RECTIFIER DIODE 1100 A, 2500 V, SILICON, RECTIFIER DIODE 1100 A, 3000 V, SILICON, RECTIFIER DIODE 1100 A, 3200 V, SILICON, RECTIFIER DIODE 1400 A, 400 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
package instruction O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 -
Contacts 2 2 2 2 2 2 2 2 -
Manufacturer packaging code B-43 B-43 B-43 B-43 B-43 B-43 B-43 B-43 -
Reach Compliance Code compli compli compli compli compli compli compli compli -
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Other features HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY HIGH SURGE CAPABILITY -
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.31 V 1.31 V 1.31 V 1.31 V 1.31 V 1.44 V 1.44 V 1.44 V -
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 -
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 -
Maximum non-repetitive peak forward current 13600 A 13600 A 13600 A 13600 A 13600 A 11000 A 11000 A 11000 A -
Number of components 1 1 1 1 1 1 1 1 -
Phase 1 1 1 1 1 1 1 1 -
Number of terminals 2 2 2 2 2 2 2 2 -
Maximum operating temperature 180 °C 180 °C 180 °C 180 °C 180 °C 150 °C 150 °C 150 °C -
Maximum output current 1400 A 1400 A 1400 A 1400 A 1400 A 1100 A 1100 A 1100 A -
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND -
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 800 V 400 V 1200 V 1600 V 2000 V 2500 V 3000 V 3200 V -
surface mount YES YES YES YES YES YES YES YES -
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD -
Terminal location END END END END END END END END -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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