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BYW29G-200

Description
8 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BYW29G-200 Overview

8 A, 200 V, SILICON, RECTIFIER DIODE

BYW29G-200 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-263
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.15 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
®
BYW29G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
HIGH SURGE CURRENT
SMD
A
NC
8A
200 V
35 ns
0.85 V
A
K
K
D
2
PAK
(Plastic)
DESCRIPTION
Single rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in a surface mount packageD
2
PAK, this
device is intended for use in high frequency in-
verters, free wheeling and polarity protection appli-
cations.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
(All pins connected)
Repetitive peak forward current
Storage and junction temperature range
Tc=120°C
δ
= 0.5
tp=10ms
sinusoidal
tp = 5
µs
f = 5 kHz
Value
200
16
8
80
75
- 40 to + 150
Unit
V
A
A
A
A
°C
October 1999 - Ed: 2
1/5

BYW29G-200 Related Products

BYW29G-200 BYW29G200
Description 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE
application EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 80 A 80 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum repetitive peak reverse voltage 200 V 200 V
Maximum reverse recovery time 0.035 µs 0.0350 us
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
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