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BYW29G200

Description
8 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size61KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BYW29G200 Overview

8 A, 200 V, SILICON, RECTIFIER DIODE

BYW29G200 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC, D2PAK-3
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current8 A
Maximum non-repetitive peak forward current80 A
®
BYW29G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
HIGH SURGE CURRENT
SMD
A
NC
8A
200 V
35 ns
0.85 V
A
K
K
D
2
PAK
(Plastic)
DESCRIPTION
Single rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in a surface mount packageD
2
PAK, this
device is intended for use in high frequency in-
verters, free wheeling and polarity protection appli-
cations.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
(All pins connected)
Repetitive peak forward current
Storage and junction temperature range
Tc=120°C
δ
= 0.5
tp=10ms
sinusoidal
tp = 5
µs
f = 5 kHz
Value
200
16
8
80
75
- 40 to + 150
Unit
V
A
A
A
A
°C
October 1999 - Ed: 2
1/5

BYW29G200 Related Products

BYW29G200 BYW29G-200
Description 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Shell connection CATHODE CATHODE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
application EFFICIENCY EFFICIENCY
Phase 1 1
Maximum reverse recovery time 0.0350 us 0.035 µs
Maximum repetitive peak reverse voltage 200 V 200 V
Maximum non-repetitive peak forward current 80 A 80 A
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