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Datasheet> All Categories > semiconductor> Discrete semiconductor> BC857BTA
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BC857BTA

Description
Bipolar Transistors - BJT
Categorysemiconductor    Discrete semiconductor   
File Size35KB，3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Bipolar Transistors - BJT

BC857BTA Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSNo
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min220
DC Current Gain hFE Max220 at 2 mA at 5 V
Height1 mm
Length3.05 mm
Minimum Operating Temperature- 55 C
Pd - Power Dissipation330 mW
Width1.4 mm
Unit Weight0.000282 oz

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SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A–3A
BC856B–Z3B
BC857A–Z3E
BC857B–3F
BC857C–3G
BC858A–3J
BC858B–3K
BC858C–3L
BC859A–Z4A
BC859B–4B
BC859C–Z4C
BC860A–Z4E
BC860B–4F
BC860C–4GZ
COMPLEMENTARY TYPES
BC856
BC857
BC858
BC859
BC860
BC846
BC847
BC848
BC849
BC850
BC856
BC858
BC860
BC857
BC859
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
BC858
BC859
BC860
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
EM
I
BM
I
EM
P
tot
T
j
:T
stg
-80
-80
-65
-50
-50
-45
-30
-30
-30
-30
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC856 BC857 BC858 BC859 BC860
-15
-4
-75 -75
-300 -300
-75
-300
-250
-650
-300
-600
-700
-850
-600 -600
-650 -650
-750 -750
-600
-650
-750
-820
-580 -580
-650 -650
-750 -750
-75 -75
-250 -250
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
UNIT CONDITIONS.
nA
V
CB
= -30V
V
CB
= -30V
µ
A
Tamb=150°C
mV I
C
=-10mA,
I
B
=-0.5mA
mV I
C
=-100mA,
I
B
=-5mA
mV I
C
=-10mA*
mV
mV
mV
mV
I
C
=-10mA,
I
B
=-0.5mA
I
C
=-100mA,
I
B
=-5mA
I
C
=-2mA
V
CE
=-5V
I
C
=-10mA
V
CE
=-5V
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.

BC857BTA Related Products

BC857BTA BC856BTA BC856BTC BC857BUSTA
Description Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Diodes Diodes Diodes Diodes
RoHS No No No No
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Unit Weight 0.000282 oz 0.000282 oz 0.000282 oz 0.000282 oz
Transistor Polarity PNP PNP PNP -
Configuration Single Single Single -
Collector- Emitter Voltage VCEO Max 45 V 65 V 65 V -
Collector- Base Voltage VCBO 50 V 80 V 80 V -
Emitter- Base Voltage VEBO 5 V 5 V 5 V -
Maximum DC Collector Current 0.1 A 0.1 A 0.1 A -
Gain Bandwidth Product fT 150 MHz 150 MHz 150 MHz -
Maximum Operating Temperature + 150 C + 150 C + 150 C -
DC Collector/Base Gain hfe Min 220 220 at 2 mA at 5 V 220 at 2 mA at 5 V -
DC Current Gain hFE Max 220 at 2 mA at 5 V 220 at 2 mA at 5 V 220 at 2 mA at 5 V -
Height 1 mm 1 mm 1 mm -
Length 3.05 mm 3.05 mm 3.05 mm -
Minimum Operating Temperature - 55 C - 55 C - 55 C -
Pd - Power Dissipation 330 mW 330 mW 330 mW -
Width 1.4 mm 1.4 mm 1.4 mm -

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