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BFU530XRVL

Description
RF Bipolar Transistors NPN wideband silicon RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size313KB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF Bipolar Transistors NPN wideband silicon RF transistor

BFU530XRVL Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerNXP
RoHSDetails
TechnologySi
PackagingReel
Factory Pack Quantitycbssxyrf10000
Unit Weight0.000311 oz
BFU530XR
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143R package.
The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.65 dB at 900 MHz
Maximum stable gain 21 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
c
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
T
sp
87
C
I
C
= 10 mA; V
CE
= 8 V
V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 900 MHz
[1]
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
-
60
-
-
Typ
-
-
-
-
10
-
95
0.36
11
Max
24
12
24
2
40
450
200
-
-
Unit
V
V
V
V
mA
mW
pF
GHz
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