BFS20TA datasheet, PDF - EEWORLD Datasheet

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BFS20TA: DescriptionBipolar Transistors - BJT; Categorysemiconductor Discrete semiconductor; File Size45KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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Bipolar Transistors - BJT

BFS20TA Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	No
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	20 V
Collector- Base Voltage VCBO	30 V
Emitter- Base Voltage VEBO	4 V
Maximum DC Collector Current	0.025 A
Gain Bandwidth Product fT	450 MHz
Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	40
Height	1 mm
Length	3.05 mm
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	330 mW
Width	1.4 mm
Unit Weight	0.000282 oz

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SOT23 NPN SILICON PLANAR

VHF TRANSISTOR

ISSUE 3 JANUARY 1996

PARTMARKING DETAIL G1

C

7

BFS20

E

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

30

20

4

25

330

-55 to +150

SOT23

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector Cut-Off

Current

Base-Emitter Voltage

SYMBOL

I

CBO

MIN.

TYP.

MAX.

100

10

740

40

275

85

450

0.35

0.8

0.40

MHz

pF

900

UNIT

µ

A

CONDITIONS.

V

CB

=20V, I

E

=0

V

CB

=20V, I

E

=0,

T

amb

=100°C

I

C

=7mA, V

CE

=10V*

I

C

=7mA, V

CE

=10V*

I

C

=5mA, V

CE

=10V

f=100MHz

I

C

=1mA, V

CE

=10V

f=1MHz

I

E

=I

e

=0, V

CB

=10V

f=1MHz

nA

V

BE

mV

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Feedback Capacitance

Collector Capacitance

f

T

C

re

C

TC

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 53

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