BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV19W-G
BAV20W-G
BAV21W-G
TYPE
DIFFERENTIATION
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
ORDERING CODE
BAV19W-G3-08 or BAV19W-G3-18
BAV20W-G3-08 or BAV20W-G3-18
BAV21W-G3-08 or BAV21W-G3-18
TYPE
MARKING
AS
AT
AU
CIRCUIT
CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
TEST CONDITION
PART
BAV19W-G
BAV20W-G
BAV21W-G
BAV19W-G
BAV20W-G
BAV21W-G
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
I
F(AV)
f
50 Hz
t<1s
I
FRM
I
FSM
P
tot
VALUE
100
150
200
120
200
250
250
200
625
1
410
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
Repetitive peak reverse voltage
DC forward current
(1)
Rectified current (average) half
wave rectification with resist. load
(1)
Repetitive peak forward current
(1)
Surge forward current
Power dissipation
(1)
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
(1)
Storage temperature range
(1)
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
375
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
Note
(1)
Valid provided that leads are kept at ambient temperature
Rev. 1.4, 22-Feb-18
Document Number: 85188
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
V
R
= 100 V, T
j
= 100 °C
Leakage current
V
R
= 150 V
V
R
= 150 V, T
j
= 100 °C
V
R
= 200 V
V
R
= 200 V, T
j
= 100 °C
Dynamic forward resistance
Diode capacitance
Reverse recovery time
I
F
= 10 mA
V
R
= 0, f = 1 MHz
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
BAV19W-G
BAV19W-G
BAV20W-G
BAV20W-G
BAV21W-G
BAV21W-G
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
r
f
C
D
t
rr
5
1.5
50
pF
ns
MIN.
TYP.
MAX.
1
1250
100
15
100
15
100
15
UNIT
V
mV
nA
μA
nA
μA
nA
μA
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Admissible Power Dissipation (mW)
1000
600
I
F
- Forward Current (mA)
100
T
j
= 100 °C
500
400
10
25 °C
300
1
200
0.1
100
0.01
0
18858
0
0
20
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1
21937
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
I
O
, I
F
- Admissible Forward Current (A)
0.2
DC current I
F
Current (rectif.) I
O
0.1
r
f
- Dynamic Forward Resistance
(Ω)
0.3
100
10
0
0
30
60
90
120
150
1
1
18861
10
100
18859
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.4, 22-Feb-18
Document Number: 85188
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
1000
2.0
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
C
D
- Diode Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
Reverse Voltage
1
BAV19W-G V
R
= 100 V
BAV20W-G V
R
= 150 V
BAV21W-G V
R
= 200 V
0.1
0
18862-1
40
80
120
160
200
21942
0
5
10
15
20
25
30
35
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Diodes Capacitance vs. Reverse Voltage
100
10
I
FSM
(A)
1
T
J
= 25 °C - Prior to Surge
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
p
- Test Pulse (s)
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration
Maximum Admissible Values of Square Pulses
Rev. 1.4, 22-Feb-18
Document Number: 85188
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-123
0.1 (0.004) max.
1.35 (0.053)
8°
Vishay Semiconductors
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
0.15 (0.006)
0.10 (0.004)
1 (0.039)
0.2 (0.008)
0° to
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
0.65 (0.026)
0.45 (0.018)
3.85 (0.152)
3.55 (0.140)
1.40 (0.055)
1.7 (0.067)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.4, 22-Feb-18
Document Number: 85188
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.85 (0.033)
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