TC4431/TC4432
1.5A High-Speed 30V MOSFET Drivers
Features
• High Peak Output Current – 1.5 A
• Wide Input Supply Operating Range:
- 4.5V to 30V
• High Capacitive Load Drive Capability:
- 1000 pF in 25 nsec
• Short Delay Times – <78 nsec Typ.
• Low Supply Current:
- With Logic ‘1’ Input – 2.5 mA
- With Logic ‘0’ Input – 300 µA
• Low Output Impedance – 7
Ω
• Latch-Up Protected: Will Withstand >300 mA
Reverse Current
• ESD Protected – 4 kV
General Description
The TC4431/TC4432 are 30V CMOS buffer/drivers
suitable for use in high-side driver applications. They
will not latch up under any conditions within their power
and voltage ratings. They can accept, without damage
or logic upset, up to 300 mA of reverse current (of
either polarity) being forced back into their outputs. All
terminals are fully protected against up to 4 kV of
electrostatic discharge.
Under-voltage lockout circuitry forces the output to a
‘low’ state when the input supply voltage drops below
7V. For operation at lower voltages, disable the lockout
and start-up circuit by grounding pin 3 (LOCK DIS); for
all other situations, pin 3 (LOCK DIS) should be left
floating. The under-voltage lockout and start-up circuit
gives brown out protection when driving MOSFETS.
Applications
• Small Motor Drive
• Power MOSFET Driver
• Driving Bipolar Transistors
Package Type
8-Pin PDIP/SOIC/CERDIP
V
DD
1
IN 2
LOCK DIS 3
GND 4
TC4431
8 V
DD
7 OUT
6 OUT
5 GND
7
6
Inverting
V
DD
1
IN 2
LOCK DIS 3
GND 4
7
6
Non Inverting
TC4432
8 V
DD
7 OUT
6 OUT
5 GND
2
2
©
2007 Microchip Technology Inc.
DS21424D-page 1
TC4431/TC4432
Functional Block Diagram
8
3
LOCK DIS
2 mA
Inverting
TC4431
7
6
2
Input
Non Inverting
TC4432
TC4431/TC4432
Inverting/Non Inverting
4, 5
GND
Effective
Input
C = 10 pF
UV LOCK
VDD
OUT
OUT
250 mV
DS21424D-page 2
©
2007 Microchip Technology Inc.
TC4431/TC4432
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ....................................................... 36V
Input Voltage (Note
1)...................
V
DD
+ 0.3V to GND
Package Power Dissipation (T
A
≤
70°C)
PDIP ............................................................ 730 mW
CERDIP ....................................................... 800 mW
SOIC............................................................ 470 mW
Maximum Junction Temperature, T
J
................ +150°C
Storage Temperature Range .............. -65°C to +150°C
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25ºC with 4.5V
≤
V
DD
≤
30V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current (Note
1)
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 2)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Start-up Threshold
Drop-out Threshold
Note 1:
2:
3:
I
S
V
S
V
DO
—
—
—
7
2.5
0.3
8.4
7.7
4
0.4
10
—
mA
V
V
Note 3
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
33
62
78
40
50
80
90
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
– 1.0
—
—
—
—
—
V
DD
– 0.8
—
7
3.0
1.5
0.3
—
0.025
10
—
—
—
V
V
Ω
A
A
I
OUT
= 10 mA, V
DD
= 30V
Source: V
DD
= 30V
Sink: V
DD
= 30V
Duty cycle
≤
2%, t
≤
300 µsec
I
OUT
= 100 mA
V
IH
V
IL
I
IN
2.4
—
-1
—
—
—
—
0.8
1
V
V
µA
0V
≤
V
IN
≤
12V
Sym
Min
Typ
Max
Units
Conditions
For inputs >12V, add a 1 kΩ resistor in series with the input. See
Section 2.0 “Typical Performance
Curves”
for input current graph.
Switching times are ensured by design.
For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up
circuit, otherwise, pin 3
must
be left floating.
©
2007 Microchip Technology Inc.
DS21424D-page 3
TC4431/TC4432
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, Over operating temperature range with 4.5V
≤
V
DD
≤
30V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current (Note
1)
Output
High Output Voltage
Low Output Voltage
Output Resistance
Switching Time (Note 2)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Start-up Threshold
Drop-out Threshold
Note 1:
2:
3:
I
S
V
S
V
DO
—
—
—
7
—
—
8.4
7.7
6
0.7
10
—
mA
V
V
Note 3
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
—
—
60
70
100
110
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
V
OH
V
OL
R
O
V
DD
– 1.2
—
—
—
—
—
—
0.025
12
V
V
Ω
I
OUT
= 10 mA, V
DD
= 30V
I
OUT
= 100 mA
V
IH
V
IL
I
IN
2.4
—
-10
—
—
—
—
0.8
10
V
V
µA
0V
≤
V
IN
≤
12V
Sym
Min
Typ
Max
Units
Conditions
For inputs >12V, add a 1 kΩ resistor in series with the input. See
Section 2.0 “Typical Performance
Curves”
for input current graph.
Switching times are ensured by design.
For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up cir-
cuit, otherwise, pin 3
must
be left floating.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
30V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances:
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-CERDIP
θ
JA
θ
JA
θ
JA
—
—
—
155
125
150
—
—
—
ºC/W
ºC/W
ºC/W
T
A
T
A
T
A
T
J
T
A
0
-40
-40
—
-65
—
—
—
—
—
+70
+85
+125
+150
+150
ºC
ºC
ºC
ºC
ºC
Sym
Min
Typ
Max
Units
Conditions
DS21424D-page 4
©
2007 Microchip Technology Inc.
TC4431/TC4432
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25ºC with 4.5V
≤
V
DD
≤
30V.
60
VDD = 12V
50
40
30
900 kHz
20
10
0
100
200 kHz
20 kHz
1000
C
LOAD
(pF)
10,000
600 kHz
2 MHz
150
125
100
75
50
25
0
3
6
9
12
15 18
V
DD
(V)
21
24
27
30
t
RISE
t
FALL
C
LOAD
= 1000 pF
T
A
= +25
°
C
I
SUPPLY
(mA)
FIGURE 2-1:
Capacitive Load.
50
45
INPUT CURRENT (mA)
Supply Current vs.
FIGURE 2-3:
300
250
tD1
200
150
tD2
Time (nsec)
Rise/Fall Time vs. V
DD
.
C
LOAD
= 1000 pF
T
A
= +25
°
C
40
35
30
25
20
15
10
5
0
3
6
9
12 15 18 21 24
INPUT VOLTAGE (V
IN
)
27
30
WITH 1 K RES.
WITHOUT 1 K RES.
TIME (nsec)
100
50
0
3
6
9
12
15 18
V
DD
(V)
21
24
27
30
FIGURE 2-4:
t
D1
and t
D2
Delay vs. V
DD
.
FIGURE 2-2:
Voltage.
Input Current vs. Input
©
2007 Microchip Technology Inc.
DS21424D-page 5
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