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BUK9515-100A

Description
MOSFET RAIL PWR-MOS
CategoryDiscrete semiconductor    The transistor   
File Size157KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9515-100A Overview

MOSFET RAIL PWR-MOS

BUK9515-100A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220AB
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)313 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
TO
-22
0A
B
BUK9515-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 35 A; V
sup
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C
Min
-
-
-
-55
-
-
Typ
-
-
-
-
11.5
12
Max
100
75
230
175
14.4
15
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
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