Rev.
2.2
BSP324
Feature
SIPMOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
400
25
0.17
SOT-223
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
•
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
V
Ω
A
Type
BSP324
Package
PG-SOT223
Pb-free Packaging
Yes
Non dry
Tape and Reel Information Marking
H6327:
1000 pcs/reel
BSP324
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.17
0.14
0.68
6
±20
1A
(>250V, <500V)
1.8
-55... +150
55/150/56
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
Reverse diode dv/dt
I
S
=0.17A,
V
DS
=320V, di/dt=200A/µs,
T
jmax
=175°C
kV/µs
V
W
°C
Gate source voltage
ESD
Class
(JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2012-11-29
Rev.
2.2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSP324
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
16
max.
25
Unit
K/W
85
45
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
400
1.3
Values
typ.
-
1.9
max.
-
2.3
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=94µA
Zero gate voltage drain current
V
DS
=400V,
V
GS
=0,
T
j
=25°C
V
DS
=400V,
V
GS
=0,
T
j
=125°C
µA
0.01
-
10
14.3
13.6
0.1
10
100
22
25
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.05A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.17A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2012-11-29
Rev.
2.2
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=0.17A
V
R
=200V,
I
F=
l
S
,
di
F
/dt=100A/µs
BSP324
Symbol
Conditions
min.
Values
typ.
0.19
103
9.2
3.8
4.6
4.4
17
68
max.
-
154
13.6
5.7
6.9
6.6
25
102
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.14A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.09
-
-
-
-
-
-
-
S
pF
V
DD
=225V,
V
GS
=10V,
I
D
=0.17A,
R
G
=6Ω
ns
Q
gs
Q
gd
Q
g
V
DD
=320V,
I
D
=0.17A
-
-
-
-
0.35
2.17
4.54
3.6
0.45
2.82
5.9
-
nC
V
DD
=320V,
I
D
=0.17A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=320V,
I
D
=0.17A
V
I
S
T
A
=25°C
-
-
-
-
-
-
-
0.8
85
104
0.17
0.68
1.2
127
156
A
V
ns
nC
Page 3
2012-11-29
Rev.
2.2
1 Power dissipation
P
tot
=
f
(T
A
)
1.9
BSP324
BSP324
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
≥
10 V
BSP324
0.18
W
A
1.6
0.14
1.4
P
tot
I
D
0.1
0.08
0.06
0.04
0.02
0
160
0
20
40
60
80
100
120
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
0.12
°C
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSP324
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP324
A
K/W
10
0
t
= 170.0µs
p
10
1
I
D
/
I
D
=
V
DS
1 ms
10
-1
Z
thJA
10
10 ms
0
)
(on
DS
R
D = 0.50
0.20
0.10
10
-2
10
-1
single pulse
0.05
0.02
DC
0.01
10
-3
10
0
10
1
10
2
V
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
s
10
4
V
DS
Page 4
t
p
2012-11-29
Rev.
2.2
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.6
BSP324
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
22
Ω
18
R
DS(on)
10V
7V
6V
5V
4.5V
4.3V
4.1V
3.9V
3.7V
16
14
12
0.4
0.3
3.7V
10
3.9V
4.1V
8
4.3V
0.2
4.5V
6
5V
6V
4
7V
0.1
10V
2
0
0
1
2
3
4
5
6
7
8
10
0
0
0.05
0.1
0.15
0.2
0.25
A
I
D
0.35
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.35
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.36
A
S
0.28
0.25
0.2
g
fs
0.15
0.1
0.05
0
0
1
2
3
0.24
0.2
0.16
0.12
0.08
0.04
0
I
D
V
V
GS
Page 5
5
0
0.05
0.1
0.15
0.2
0.25
A
I
D
0.35
2012-11-29
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