IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT138X-600G
4Q Triac
1 May 2015
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT186A (TO-220F) "full pack" plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Isolated package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
h
≤ 56 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
8
50
mA
-
5
50
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
600
95
125
12
Unit
V
A
°C
A
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TO
-2
20F
NXP Semiconductors
BT138X-600G
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
Typ
11
30
Max
50
100
Unit
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200
250
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT138X-600G
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
BT138X-600G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
2 / 13
NXP Semiconductors
BT138X-600G
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 56 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
12
95
105
45
50
50
10
50
2
5
0.5
150
125
003aaj941
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; sine-wave pulse
I
G
= 100 mA; T2+ G+
I
G
= 100 mA; T2+ G-
I
G
= 200 mA; T2- G+
I
G
= 100 mA; T2- G-
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
I
T(RMS)
(A)
12
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aaj939
over any 20 ms period
-
-40
-
100
I
T(RMS)
(A)
80
56 °C
9
60
6
40
3
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 56 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BT138X-600G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
3 / 13
NXP Semiconductors
BT138X-600G
4Q Triac
20
P
tot
(W)
16
003aaj943
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
45
T
h(max)
(°C)
61
α
α = 180°
120°
12
α
90°
60°
30°
77
8
93
4
109
0
0
3
6
9
12
I
T(RMS)
(A)
125
15
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
100
I
TSM
(A)
80
Total power dissipation as a function of RMS on-state current; maximum values
003aaj944
60
40
I
T
I
TSM
t
20
1/f
0
T
j(init)
=
25
°C
max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT138X-600G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
4 / 13
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