BAR64...
Silicon PIN Diode
•
High voltage current controlled RF resistor
for RF attenuator and switches
•
Frequency range above 1 MHz up to 6 GHz
•
Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
•
Low forward resistance (typ. 2.1
Ω
@ 10 mA)
•
Very low signal distortion
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
BAR64-02EL
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
!
BAR64-05
BAR64-05W
!
BAR64-06
BAR64-06W
!
,
,
,
,
,
,
Type
BAR64-02EL*
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
1
*BAR64-02EL
Package
TSLP-2-19
SC79
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
Configuration
single, leadless
single
single
series
series
common cathode
common cathode
common anode
common anode
L
S
(nH)
0.4
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
Marking
OE
O
blue 2
PPs
PPs
PRs
PRs
PSs
PSs
is not qualified according AEC Q101
1
2013-06-10
BAR64...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR64-02EL,
T
S
≤
135 °C
BAR64-02V,
T
S
≤
125 °C
BAR64-03W,
T
S
≤
25 °C
BAR64-04, -05, -06,
T
S
≤
65 °C
BAR64-04W, -05W, -06W,
T
S
≤
115 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR64-02EL
BAR64-02V, -04W, -05W, -06W
BAR64-03W
BAR64-04, -05, -06
Symbol
R
thJS
Symbol
V
R
I
F
P
tot
Value
150
100
250
250
250
250
250
Unit
V
mA
mW
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
Value
≤
60
≤
140
≤
370
≤
340
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Forward voltage
I
F
= 50 mA
V
F
-
-
1.1
V
(BR)
150
-
-
typ.
max.
Unit
V
2
2013-06-10
BAR64...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 20 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1...1.8 GHz, BAR64-02EL
V
R
= 0 V, f = 1...1.8 GHz, all other
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
I
F
= 100 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 3 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
V
R
= 0 V,
f
= 5.6 GHz
1
BAR64-02EL
Symbol
min.
C
T
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
Values
typ.
max.
Unit
pF
0.23
0.3
0.13
0.17
10
4
3
12.5
2.1
0.85
1550
0.35
-
-
-
k
Ω
-
-
-
Ω
20
2.8
1.35
-
ns
-
W
I
I
L
-
-
-
-
50
0.32
0.23
0.16
22
17
14.5
8.5
-
-
-
-
-
-
-
-
µm
dB
I
SO
-
-
-
-
in series configuration,
Z
= 50
Ω
3
2013-06-10
BAR64...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= Parameter
0.7
Reverse parallel resistance
R
P
=
ƒ
(V
R
)
f
= Parameter
10
4
KOhm
pF
10
3
100 MHz
1 GHz
1.8 GHz
C
T
R
p
1 MHz
100 MHz
1 GHz
1.8 GHz
V
0.5
10
2
0.4
10
1
0.3
10
0
0.2
0.1
0
2
4
6
8
10
12
14
16
20
10
-1
0
5
10
15
20
25
30
V
40
V
R
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 100MHz
10
3
Ohm
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
10
-1
10
2
R
F
10
-2
10
1
I
F
10
-3
10
-4
10
0
10
-5
-40 °C
25 °C
85 °C
125 °C
10
-1 -2
10
10
-1
10
0
10
1
mA
10
2
10
-6
0
0.2
0.4
0.6
0.8
V
1.2
I
F
V
F
4
2013-06-10
BAR64...
Intermodulation intercept point
IP
3
=
ƒ
(I
F
);
f
= Parameter
10
2
Forward current
I
F
=
ƒ
(T
S
)
BAR64-02EL
120
mA
f=900MHz
f=1800MHz
IP
3
I
F
dBm
100
90
80
70
60
50
40
30
20
10
10
1 -1
10
10
0
mA
10
1
0
0
30
60
90
120
°C
165
I
F
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAR64-02V
120
mA
Forward current
I
F
=
ƒ
(T
S
)
BAR64-04, BAR64-05, BAR64-06
120
mA
100
90
80
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2013-06-10
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