TO
-22
0A
B
BTA208-800E
3Q Hi-Com Triac
Rev. 05 — 12 April 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package.
This "series E" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers
including microcontrollers.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct interfacing with low power
drivers and microcontrollers
Good immunity to false turn-on by
dV/dt
High commutation capability with
maximum false trigger immunity
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Electronic thermostats
General purpose motor controls
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive peak
on-state current
RMS on-state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
102 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Conditions
Min
-
-
Typ
-
-
Max Unit
800
65
V
A
I
T(RMS)
-
-
8
A
Static characteristics
I
GT
gate trigger current
-
-
-
-
-
-
10
10
10
mA
mA
mA
NXP Semiconductors
BTA208-800E
3Q Hi-Com Triac
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA208-800E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤
102 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-40
-
Max
800
8
65
72
21
100
2
5
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA208-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 12 April 2011
2 of 13
NXP Semiconductors
BTA208-800E
3Q Hi-Com Triac
10
I
T(RMS)
(A)
8
102
°C
003aaf581
25
I
T(RMS)
(A)
20
003aaf617
6
15
4
10
2
5
0
−50
0
0
50
100
150
T
mb
(°C)
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
12
Fig 2.
RMS on-state current as a function of surge
duration; maximum value
003aaf618
P
tot
(W)
10
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
101
T
mb(max)
(°C)
105
8
109
6
113
4
117
2
121
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA208-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 12 April 2011
3 of 13
NXP Semiconductors
BTA208-800E
3Q Hi-Com Triac
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab121
10
3
I
T
I
TSM
(A)
(1)
10
2
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
−2
10
−1
1
10
t
p
(ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 12 April 2011
4 of 13
NXP Semiconductors
BTA208-800E
3Q Hi-Com Triac
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
full cycle; see
Figure 6
half cycle; see
Figure 6
Min
-
-
-
Typ
-
-
60
Max
2
2.4
-
Unit
K/W
K/W
K/W
thermal resistance from junction to ambient in free air
10
Z
th(j-mb)
(K/W)
1
unidirectional
003aaf584
bidirectional
10
−1
P
tp
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BTA208-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 12 April 2011
5 of 13
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