BLF8G20LS-230V
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
230 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1800
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
18
D
(%)
31.7
ACPR
(dBc)
29
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for multi standard and multi carrier applications in the 1800 MHz
to 2000 MHz frequency range
BLF8G20LS-230V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
6
2
7
[1]
Simplified outline
4
1
3
5
Graphic symbol
1
6,7
2
3
aaa-003619
4,5
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G20LS-230V
-
earless flanged LDMOST ceramic package; 6 leads
Version
SOT1239B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W;
V
DS
= 28 V; I
Dq
= 1600 mA
Typ
0.27
Unit
K/W
BLF8G20LS-230V#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 12
BLF8G20LS-230V
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C, unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V; I
D
= 1.6 A
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 13.5 A
Min
65
1.5
1.7
-
-
-
-
-
Typ
-
1.9
2.1
-
50.6
-
19.6
0.06
Max
-
2.3
2.5
4.2
-
420
-
-
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz; RF performance
at V
DS
= 28 V; I
Dq
= 1800 mA; T
case
= 25
C; unless otherwise specified; in a production circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
Min
16.8
27
-
-
Typ
18
31.7
10
29
Max
-
-
6
24
Unit
dB
%
dB
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-230V is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1800 mA; P
L
= 200 W (CW); f = 1805 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 1600 mA; V
DS
= 28 V. Typical values unless otherwise specified.
f
(MHz)
1805
1843
1880
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.26
j3.29
1.87
j3.56
1.97
j3.73
Z
L[1]
()
0.90
j2.12
0.88
j2.16
0.88
j2.18
BLF8G20LS-230V#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 12
BLF8G20LS-230V
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 VBW in class-AB operation
The BLF8G20LS-230V has a video bandwidth of 65 MHz (typical) when measured in a
class-AB test circuit operating at a center frequency of 1843 MHz for V
DS
= 28 V and
I
Dq
= 1600 mA.
7.4 Test circuit
50 mm
50 mm
C10
C11
C4
R1
C3
R2
C6
C8
C15
60 mm
C1
C14
C16
R4
C5
C2
C9
C12
R3
C7
C13
aaa-009665
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.76 mm.
See
Table 9
for list of components.
Fig 2.
Component layout for test circuit
Table 9.
List of components
For test circuit, see
Figure 2.
Component
C1, C2, C3, C8, C9, C14
C4, C5, C11, C12
C6, C7, C10, C13
C15, C16
R1, R2, R3, R4
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Value
24 pF
1
F,
50 V
10
F,
50 V
2200
F,
63 V
5.1
SMD 0805
Remarks
ATC800B
Murata
Murata
BLF8G20LS-230V#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 12
BLF8G20LS-230V
Power LDMOS transistor
7.5 Graphical data
7.5.1 Pulsed CW
aaa-009666
aaa-009667
20
G
p
(dB)
16
(1)
(1)
(2)
(2)
(3)
(3)
60
η
D
(%)
50
RL
in
(dB)
-5
G
p
-10
12
40
(3)
-15
8
η
D
4
20
30
(1)
(2)
-20
0
0
50
100
150
200
250
P
L
(W)
10
300
-25
0
50
100
150
200
250
P
L
(W)
300
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
(1) f = 1808 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
(1) f = 1808 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Input return loss as a function of output
power; typical values
BLF8G20LS-230V#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 12
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