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BSZ019N03LSATMA1

Description
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

BSZ019N03LSATMA1 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance1.6 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge44 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time4.6 ns
Forward Transconductance - Min70 S
Height1.1 mm
Length3.3 mm
Pd - Power Dissipation69 W
Rise Time6.8 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time5.4 ns
Width3.3 mm
n-Channel Power MOSFET
OptiMOS™
BSZ019N03LS
Data Sheet
2.1, 2011-09-21
Final
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