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IRL60SL216

Description
Resistor Kits 122x100 E96 1 100ppm 10R-1M +JUMPER
Categorysemiconductor    Discrete semiconductor   
File Size701KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRL60SL216 Overview

Resistor Kits 122x100 E96 1 100ppm 10R-1M +JUMPER

IRL60SL216 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-262-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current298 A
Rds On - Drain-Source Resistance1.6 mOhms
Vgs th - Gate-Source Threshold Voltage1 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge170 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time120 ns
Forward Transconductance - Min229 S
Height9.45 mm
Length10.2 mm
Pd - Power Dissipation375 W
Rise Time180 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time190 ns
Typical Turn-On Delay Time70 ns
Width4.5 mm
Unit Weight0.073511 oz
IR MOSFET
StrongIRFET™
IRL60S216
IRL60SL216
Application
Brushed Motor drive applications
BLDC Motor drive applications

Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
 
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
60V
1.6m
1.95m
298A
195A
G
S
I
D (Package Limited)
D
D
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
S
G
D
2
Pak
IRL60S216
G
S
D
TO-262
IRL60SL216
G
Gate
D
Drain
S
Source
Base part number
IRL60SL216
IRL60S216
Package Type
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRL60SL216
IRL60S216
)
RDS(on), Drain-to -Source On Resistance (m
6
ID = 100A
5
4
TJ = 125°C
3
2
1
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
ID, Drain Current (A)
315
Limited By Package
270
225
180
135
90
45
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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