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BCV-61B-E6433

Description
Bipolar Transistors - BJT NPN Silicon Double Transistor 30V 100mA
Categorysemiconductor    Discrete semiconductor   
File Size527KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCV-61B-E6433 Overview

Bipolar Transistors - BJT NPN Silicon Double Transistor 30V 100mA

BCV-61B-E6433 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerInfineon
RoHSDetails
Transistor PolarityNPN
PackagingCut Tape
PackagingMouseReel
PackagingReel
QualificationAEC-Q100
Factory Pack Quantity10000
BCV61
NPN Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and
V
BE
matching
High current gain
Low collector-emitter saturation voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
C1 (2)
C2 (1)
3
2
4
1
Tr.1
Tr.2
E1 (3)
E2 (4)
EHA00012
Type
BCV61B
BCV61C
Maximum Ratings
Parameter
Marking
1Ks
1Ls
1 = C2
1 = C2
Pin Configuration
2 = C1
2 = C1
3 = E1
3 = E1
4 = E2
4 = E2
Package
SOT143
SOT143
Symbol
V
CEO
V
CBO
V
EBS
I
C
I
CM
I
BM
P
tot
T
j
T
stg
R
thJS
Value
30
30
6
100
200
200
300
150
-65 ... 150
Unit
V
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current,
t
p
<
10 ms
Base peak current (transistor T1)
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
mA
mW
°C
Junction - soldering point
1)
1For calculation of
R
170
K/W
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-10-13

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RoHS Details Details
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Packaging Reel MouseReel
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