MPSA77 — PNP Darlington Transistor
March 2009
MPSA77
PNP Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 800mA.
• Sourced from process 61.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Value
-60
-60
-10
-1.2
-55 ~ +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
MPSA77 Rev. B1
1
www.fairchildsemi.com
MPSA77 — PNP Darlington Transistor
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= -100μA, I
B
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -10V, I
C
= 0
-60
-100
-100
V
nA
nA
Parameter
Test Condition
Min.
Max.
Units
On Characteristics *
h
FE
V
CE
(sat)
V
BE
(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= -10mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
I
C
= -100mA, I
B
= -0.1mA
I
C
= -100mA, V
CE
= -5.0mA
10,000
10,000
-1.5
-2.0
V
V
Small Signal Characteristics *
f
T
Current Gain Dandwidth Product
I
C
= -10mA, V
CE
= -5.0V
f = 100MHz
100
MHz
* Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%
© 2009 Fairchild Semiconductor Corporation
MPSA77 Rev. B1
2
www.fairchildsemi.com
MPSA77 — PNP Darlington Transistor
Typical Performance Characteristics
© 2009 Fairchild Semiconductor Corporation
MPSA77 Rev. B1
3
www.fairchildsemi.com
MPSA77 — PNP Darlington Transistor
Typical Performance Characteristics (Continued)
Power Dissipation vs Ambient Temperature
1.00
P
D
- POWER DISSIPATION (W)
0.75
T O -92
0.50
0.25
0.00
0
25
50
75
100
125
150
TE M P E R A TU R E ( C )
o
© 2009 Fairchild Semiconductor Corporation
MPSA77 Rev. B1
4
www.fairchildsemi.com
MPSA77 — PNP Darlington Transistor
Mechanical Dimensions (TO-92)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
MPSA77 Rev. B1
5
www.fairchildsemi.com
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