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BFN-26-E6433

Description
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Categorysemiconductor    Discrete semiconductor   
File Size526KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BFN-26-E6433 Overview

Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS

BFN-26-E6433 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerInfineon
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max300 V
Collector- Base Voltage VCBO300 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current0.2 A
Gain Bandwidth Product fT70 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current0.2 A
Height1 mm
Length2.9 mm
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Pd - Power Dissipation360 mW
Factory Pack Quantity10000
Width1.3 mm
Unit Weight0.000282 oz
BFN24, BFN26
NPN Silicon High-Voltage Transistors
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN27 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
Type
BFN24
BFN26
Maximum Ratings
Parameter
Collector-emitter voltage
BFN24
BFN26
Collector-base voltage
BFN24
BFN26
Emitter-base voltage
Collector current
Marking
FHs
FJs
1=B
1=B
Pin Configuration
2=E
2=E
Symbol
V
CEO
250
300
V
CBO
250
300
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
6
200
500
100
200
360
150
Package
SOT23
SOT23
Value
Unit
V
3=C
3=C
mA
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
74 °C
Junction temperature
Storage temperature
mW
°C
-65 ... 150
1
2011-12-19

BFN-26-E6433 Related Products

BFN-26-E6433 BFN-24-E6327
Description Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Infineon Infineon
RoHS Details Details
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-23-3 SOT-23-3
Transistor Polarity NPN NPN
Configuration Single Single
Collector- Emitter Voltage VCEO Max 300 V 250 V
Collector- Base Voltage VCBO 300 V 250 V
Emitter- Base Voltage VEBO 6 V 6 V
Maximum DC Collector Current 0.2 A 0.2 A
Gain Bandwidth Product fT 70 MHz 70 MHz
Maximum Operating Temperature + 150 C + 150 C
Continuous Collector Current 0.2 A 0.2 A
Height 1 mm 1 mm
Length 2.9 mm 2.9 mm
Minimum Operating Temperature - 65 C - 65 C
Pd - Power Dissipation 360 mW 360 mW
Factory Pack Quantity 10000 24000
Width 1.3 mm 1.3 mm
Packaging Reel Reel
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