IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT1308W-600D
4Q Triac
20 August 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package.
This very sensitive gate "series D" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
•
•
•
AC Fan controller
General purpose low power phase control
General purpose low power switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
sp
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
-
2
5
mA
-
1
5
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
9
0.8
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
SO
T2
23
NXP Semiconductors
BT1308W-600D
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 9
Min
-
-
Typ
2
4
Max
5
7
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
main terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT1308W-600D
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
2 / 14
NXP Semiconductors
BT1308W-600D
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
sp
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
0.8
9
10
0.32
50
50
50
10
1
5
0.1
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
3 / 14
NXP Semiconductors
BT1308W-600D
4Q Triac
6
I
T(RMS)
(A)
4
003aab489
I
T(RMS)
(A)
1
003aab487
0.8
0.6
0.4
2
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 107 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
1.2
P
tot
(W)
0.8
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
003aac209
α = 180°
120°
90°
60°
30°
0.4
0.0
0
0.2
0.4
0.6
0.8
I
T(RMS)
(A)
1
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
4 / 14
京公网安备 11010802033920号
EEWORLD
