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ZTX1149ASTZ

Description
Bipolar Transistors - BJT PNP High Gain u0026 Crnt
Categorysemiconductor    Discrete semiconductor   
File Size66KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX1149ASTZ Overview

Bipolar Transistors - BJT PNP High Gain u0026 Crnt

ZTX1149ASTZ Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 25 V
Collector- Base Voltage VCBO- 30 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 200 mV
Maximum DC Collector Current3 A
Gain Bandwidth Product fT135 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current- 3 A
DC Collector/Base Gain hfe Min270 at 10 mA at 2 V, 250 at 500 mA at 2 V, 195 at 2 A at 2 V, 115 at 5 A at 2 V
DC Current Gain hFE Max270 at 10 mA at 2 V
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity2000
Width2.41 mm
Unit Weight0.016000 oz
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - January 1997
FEATURES
* V
CEO
= - 25V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ZTX1149A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1149A
-30
-25
-5
-10
-3
-500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
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