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BSL207N-H6327

Description
MOSFET SMALL SIGNAL+P-CH
Categorysemiconductor    Discrete semiconductor   
File Size329KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSL207N-H6327 Overview

MOSFET SMALL SIGNAL+P-CH

BSL207N-H6327 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V, 20 V
Id - Continuous Drain Current2.1 A, 2.1 A
Rds On - Drain-Source Resistance58 mOhms, 58 mOhms
Vgs th - Gate-Source Threshold Voltage700 mV, 700 mV
Vgs - Gate-Source Voltage12 V, 12 V
Qg - Gate Charge2.1 nC, 2.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual
QualificationAEC-Q100
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time2.4 ns, 2.4 ns
Forward Transconductance - Min7 S, 7 S
Height1.1 mm
Length3 mm
Pd - Power Dissipation500 mW (1/2 W)
Rise Time2.8 ns, 2.8 ns
Factory Pack Quantity3000
Transistor Type2 N-Channel
Typical Turn-Off Delay Time11 ns, 11 ns
Typical Turn-On Delay Time5.4 ns, 5.4 ns
Width1.5 mm
BSL207N
OptiMOS 2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
70
110
2.1
A
V
mW
PG-TSOP6
6
5
4
1
2
3
Type
BSL207N
Package
TSOP-6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPL
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.1A,
R
GS
=25
W
I
D
=2.1A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.1
1.7
8.4
10.8
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: one of both transistors in operation
Rev 2.3
page 1
2013-11-06
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