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C3D02060E

Description
Schottky Diodes u0026 Rectifiers SIC SCHOTTKY DIODE 600V, 2A
Categorysemiconductor    Discrete semiconductor   
File Size968KB,6 Pages
ManufacturerCree
Websitehttp://www.cree.com/
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C3D02060E Overview

Schottky Diodes u0026 Rectifiers SIC SCHOTTKY DIODE 600V, 2A

C3D02060E Parametric

Parameter NameAttribute value
Product CategorySchottky Diodes & Rectifiers
ManufacturerCree
RoHSDetails
ProductSchottky Silicon Carbide Diodes
Mounting StyleSMD/SMT
Package / CaseTO-252-2
If - Forward Current2 A
Vrrm - Repetitive Reverse Voltage600 V
Vf - Forward Voltage1.7 V
Ifsm - Forward Surge Current65 A
ConfigurationSingle
TechnologySiC
Ir - Reverse Current50 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Operating Temperature Range- 55 C to + 175 C
Pd - Power Dissipation39.5 W
Factory Pack Quantity75
trr - Reverse Recovery time-
Type-
Unit Weight0.011993 oz
C3D02060E
®
Silicon Carbide Schottky Diode
V
RRM
Q
c
=
600 V
4A
5.8 nC
Z-Rec
Rectifier
Features
I
F
(
T
C
=135˚C)
=
=
Package
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
Benefits
TO-252-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D02060E
Package
TO-252-2
Marking
C3D02060
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol Parameter
V
RRM
V
RSM
V
DC
I
F
I
FRM
I
FSM
I
FSM
P
tot
dV/dt
∫i
2
dt
T
J
, T
stg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
i
2
t value
Operating Junction and Storage Temperature
Value
600
600
600
8
4
2
11
7.5
16.5
15
120
110
39.5
17
200
1.35
1.12
-55 to
+175
Unit
V
V
V
A
A
A
A
W
V/ns
A
2
s
˚C
T
C
=25˚C
T
C
=135˚C
T
C
=161˚C
Test Conditions
Note
Fig. 3
T
C
=25˚C, t
P
=10 ms, Half Sine Pulse
T
C
=110˚C, t
P
=10 ms, Half Sine Pulse
T
C
=25˚C, t
P
=10 ms, Half Sine Pulse
T
C
=110˚C, t
P
=10 ms, Half Sine Pulse
T
C
=25˚C, t
P
=10 ms, Pulse
T
C
=110˚C, t
P
=10 ms, Pulse
T
C
=25˚C
T
C
=110˚C
V
R
=0-600V
T
C
=25˚C, t
P
=10 ms
T
C
=110˚C, t
P
=10 ms
Fig. 8
Fig. 8
Fig. 4
1
C3D02060E Rev. E, 10-2016
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