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BUT232V

Description
Bipolar Transistors - BJT NPN Power Module
CategoryDiscrete semiconductor    The transistor   
File Size349KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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Bipolar Transistors - BJT NPN Power Module

BUT232V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionISOTOP-4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)140 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Maximum landing time (tf)400 ns
JESD-30 codeR-PUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment300 W
Maximum power dissipation(Abs)300 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceNickel (Ni)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1.9 V
®
BUT232V
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
DC/DC & DC/AC CONVERTERS
bs
O
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
400
300
7
140
210
28
42
300
2500
-55 to 150
150
Unit
V
V
V
A
A
A
A
W
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
V
CEO(sus)
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
T
stg
T
j
o
o
C
C
February 2003
1/7
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