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FDC654P
May 2003
FDC654P
Single P-Channel Logic Level PowerTrench
®
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–1.3
–0.8
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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