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BC848BTA

Description
Bipolar Transistors - BJT
Categorysemiconductor    Discrete semiconductor   
File Size41KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Bipolar Transistors - BJT

BC848BTA Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSNo
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT300 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max200 at 2 mA at 5 V
Height1 mm
Length3.05 mm
Minimum Operating Temperature- 55 C
Pd - Power Dissipation330 mW
Width1.4 mm
Unit Weight0.000282 oz
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
BC846A–Z1A
BC846B–1B
BC847A–Z1E
BC847B–1F
BC847C–1GZ
BC848A–1JZ
BC848B–1K
BC848C–Z1L
BC849B–2B
BC849C–2C
BC850B–2FZ
BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC847
BC848
BC849
BC850
BC856
BC857
BC858
BC859
BC860
BC846
BC848
BC850
BC847
BC849
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
P
tot
T
j
:T
stg
80
80
65
6
50
50
45
30
30
30
100
200
200
200
330
-55 to +150
30
30
30
5
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC846
BC847 BC848 BC849 BC850
15
5
90
250
200
600
300
600
700
900
580
660
700
770
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
UNIT CONDITIONS.
nA
V
CB
= 30V
V
CB
= 30V
µ
A
T
amb
=150°C
mV I
C
=10mA,
mV I
B
=0.5mA
mV I
C
=100mA,
mV I
B
=5mA
mV I
C
=10mA*
mV
mV I
C
=10mA,
I
B
=0.5mA
mV I
C
=100mA,
I
B
=5mA
mV I
C
=2mA
mV V
CE
=5V
mV
mV
I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.

BC848BTA Related Products

BC848BTA BC849CTC BC850CTC BC847CTC BC850BTA
Description Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Diodes Diodes Diodes Diodes Diodes
RoHS No No No No No
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Transistor Polarity NPN NPN NPN NPN NPN
Configuration Single Single Single Single Single
Collector- Emitter Voltage VCEO Max 30 V 30 V 45 V 45 V 45 V
Collector- Base Voltage VCBO 30 V 30 V 50 V 50 V 50 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V 6 V 5 V
Maximum DC Collector Current 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Gain Bandwidth Product fT 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C + 150 C
DC Collector/Base Gain hfe Min 200 420 at 2 mA at 5 V 420 at 2 mA at 5 V 420 at 2 mA at 5 V 200 at 2 mA at 5 V
DC Current Gain hFE Max 200 at 2 mA at 5 V 420 at 2 mA at 5 V 420 at 2 mA at 5 V 420 at 2 mA at 5 V 200 at 2 mA at 5 V
Height 1 mm 1 mm 1 mm 1 mm 1 mm
Length 3.05 mm 3.05 mm 3.05 mm 3.05 mm 3.05 mm
Minimum Operating Temperature - 55 C - 55 C - 55 C - 55 C - 55 C
Pd - Power Dissipation 330 mW 330 mW 330 mW 330 mW 330 mW
Width 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
Unit Weight 0.000282 oz 0.000282 oz 0.000282 oz 0.000282 oz 0.000282 oz

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