BC850CTC datasheet, PDF - EEWORLD Datasheet

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BC850CTC: DescriptionBipolar Transistors - BJT; Categorysemiconductor Discrete semiconductor; File Size41KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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Bipolar Transistors - BJT

BC850CTC Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	No
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	45 V
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	0.1 A
Gain Bandwidth Product fT	300 MHz
Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	420 at 2 mA at 5 V
DC Current Gain hFE Max	420 at 2 mA at 5 V
Height	1 mm
Length	3.05 mm
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	330 mW
Width	1.4 mm
Unit Weight	0.000282 oz

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SOT23 NPN SILICON PLANAR

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - JANUARY 1997

PARTMARKING DETAILS

BC846AZ1A

BC846B1B

BC847AZ1E

BC847B1F

BC847C1GZ

BC848A1JZ

BC848B1K

BC848CZ1L

BC849B2B

BC849C2C

BC850B2FZ

BC850C-Z2G

COMPLEMENTARY TYPES

BC846

BC847

BC848

BC849

BC850

BC856

BC857

BC858

BC859

BC860

BC846

BC848

BC850

BC847

BC849

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BC846

BC847

BC848

BC849

BC850

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Peak Emitter Current

Power Dissipation at T

amb

=25°C

Operating and Storage

Temperature Range

PARAMETER

SYMBOL

Max

Collector Cut-Off Current I

CBO

Max

CBO

CES

CEO

EBO

tot

stg

100

200

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

BC846

BC847 BC848 BC849 BC850

250

200

600

300

600

700

900

580

660

700

770

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

CE(sat)

Typ

Max.

Typ

Max.

Typ

Max.

BE(sat)

Typ

Base-Emitter Voltage

Min

Typ

Max

UNIT CONDITIONS.

= 30V

amb

=150°C

mV I

=10mA,

mV I

=0.5mA

mV I

=100mA,

mV I

=5mA

mV I

=10mA*

mV I

=10mA,

=0.5mA

mV I

=100mA,

=5mA

mV I

=2mA

mV V

=5V

=10mA

=5V

* Collector-Emitter Saturation Voltage at I

= 10mA for the characteristics going through the

operating point I

= 11mA, V

= 1V at constant base current.

BC850CTC Related Products

	BC850CTC	BC849CTC	BC848BTA	BC847CTC	BC850BTA
Description	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Manufacturer	Diodes	Diodes	Diodes	Diodes	Diodes
RoHS	No	No	No	No	No
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
Transistor Polarity	NPN	NPN	NPN	NPN	NPN
Configuration	Single	Single	Single	Single	Single
Collector- Emitter Voltage VCEO Max	45 V	30 V	30 V	45 V	45 V
Collector- Base Voltage VCBO	50 V	30 V	30 V	50 V	50 V
Emitter- Base Voltage VEBO	5 V	5 V	5 V	6 V	5 V
Maximum DC Collector Current	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Gain Bandwidth Product fT	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C
DC Collector/Base Gain hfe Min	420 at 2 mA at 5 V	420 at 2 mA at 5 V	200	420 at 2 mA at 5 V	200 at 2 mA at 5 V
DC Current Gain hFE Max	420 at 2 mA at 5 V	420 at 2 mA at 5 V	200 at 2 mA at 5 V	420 at 2 mA at 5 V	200 at 2 mA at 5 V
Height	1 mm	1 mm	1 mm	1 mm	1 mm
Length	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C
Pd - Power Dissipation	330 mW	330 mW	330 mW	330 mW	330 mW
Width	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
Unit Weight	0.000282 oz	0.000282 oz	0.000282 oz	0.000282 oz	0.000282 oz

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