BLF8G20LS-400PV;
BLF8G20LS-400PGV
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1995
I
Dq
(mA)
3400
V
DS
(V)
28
P
L(AV)
(W)
95
G
p
(dB)
19
D
(%)
28
ACPR
5M
(dBc)
33
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz.
1.2 Features and benefits
Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Excellent ruggedness
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to
1995 MHz frequency range
BLF8G20LS-400P(G)V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
decoupling1
decoupling2
n.c.
n.c.
drain1
drain2
gate1
gate2
source
decoupling1
decoupling2
n.c.
n.c.
[1]
[1]
Simplified outline
Graphic symbol
BLF8G20LS-400PV (SOT1242B)
6
1
2
7
1
6
8
3
5
8
3
4
9
5
4
9
7
2
aaa-007816
BLF8G20LS-400PGV (SOT1242C)
6
1
2
7
8
3
1
6
8
3
4
9
5
5
4
9
7
2
aaa-007816
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G20LS-400PV
-
earless flanged ceramic package; 8 leads
earless flanged ceramic package; 8 leads
BLF8G20LS-400PGV -
Version
SOT1242B
SOT1242C
Type number
BLF8G20LS-400PV_LS-400PGV#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 17
BLF8G20LS-400P(G)V
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 80 W
Typ
0.23
Unit
K/W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 15 A
-
-
-
Min Typ
65
1.5
-
-
1.9
-
51.5
-
20.6
Max Unit
-
2.3
3.0
-
300
-
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.0 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 10.5 A
0.055 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 3400 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit, tested on straight lead device.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 95 W
P
L(AV)
= 95 W
P
L(AV)
= 95 W
P
L(AV)
= 95 W
Min
17.8
-
24
-
Typ Max
19
28
-
-
12 6
33 28
Unit
dB
dB
%
dBc
BLF8G20LS-400PV_LS-400PGV#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 17
BLF8G20LS-400P(G)V
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-400PV and BLF8G20LS-400PGV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 3300 mA; 2-carrier W-CDMA signal; P
L
= 200 W;
f
c
= 1800 MHz; 5 MHz spacing, 46 % clipping.
7.2 Impedance information
Table 8.
Typical impedance for the top-half of the push-pull package
Measured load-pull data; I
Dq
= 1800 mA; V
DS
= 28 V; T
case
= 25
C, water cooled.
f
(MHz)
1800
1840
1880
1930
1960
1990
1800
1840
1880
1930
1960
1990
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
4.1
j4.66
5.2
j3.6
4.6
j1.45
2.8
j0.3
2.1
j0.5
1.56
j0.6
3.7
j7.6
4.34
j6.1
4.75
j5.2
3.17
j3.4
2
j3.05
2.5
j2.6
Z
L[1]
()
4.1
j4.5
4.4
j4.4
4.85
j4.25
4.5
j4.3
5.5
j3.5
5.5
j3.4
4.2
j6.8
4.4
j6.7
4
j6.4
4.6
j6.5
5.8
j5.5
5.8 j5.7
BLF8G20LS-400PV (straight lead)
BLF8G20LS-400PGV (gull-wing)
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF8G20LS-400PV_LS-400PGV#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 17
BLF8G20LS-400P(G)V
Power LDMOS transistor
7.3 VBW in class-AB operation
The BLF8G20LS-400PV and BLF8G20LS-400PGV have a video bandwidth of 120 MHz
(typical) when measured in a class-AB test circuit operating in the 1800 MHz to 1880 MHz
frequency band for V
DS
= 28 V and I
Dq
= 3.3 A, where the VBW is defined as the location
of the resonance in the base-band impedance measurement obtained using a
low-frequency probe.
The VBW measurement based on the 2-tone IMD test as a function of carrier spacing is
shown below.
aaa-007817
0
IMD
(dBc)
-20
IMD3
(1)
(2)
(2)
(1)
-40
IMD5
IMD7
-60
(1)
(2)
-80
1
10
carrier spacing (MHz)
10
2
(1) IMD low
(2) IMD high
Fig 2.
VBW capacity in a class-AB test circuit
BLF8G20LS-400PV_LS-400PGV#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 17
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