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TK5A65WS5X

Description
MOSFET Power MOSFET N-Channel
Categorysemiconductor    Discrete semiconductor   
File Size377KB,11 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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MOSFET Power MOSFET N-Channel

TK5A65WS5X Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerToshiba Semiconductor
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FP-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current5.2 A
Rds On - Drain-Source Resistance1 Ohms
Vgs th - Gate-Source Threshold Voltage2.5 V
Vgs - Gate-Source Voltage30 V
Qg - Gate Charge10.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time5.5 ns
Height15 mm
Length10 mm
Pd - Power Dissipation30 W
Rise Time17 ns
Factory Pack Quantity50
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time39 ns
Width4.5 mm
Unit Weight0.211644 oz
TK5A65W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK5A65W
1. Applications
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 1
Ω(typ.)
by using Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.5 to 3.5 V(V
DS
= 10 V, I
D
= 0.17 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(t = 1.0 s)
(Note 1)
(Note 1)
(T
c
= 25
)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
V
ISO(RMS)
TOR
Rating
650
±30
5.2
20.8
30
70
1.3
5.2
20.8
150
-55 to 150
2000
0.6
V
Nm
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
©2015 Toshiba Corporation
1
2014-10
2015-12-25
Rev.4.0
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