d. Maximum under Steady State conditions is 81 °C/W.
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
www.vishay.com
1
Si4156DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
=
0 V
0.8
25
17
13
12
T
C
= 25 °C
30
70
1.2
50
35
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 19 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1700
350
140
28
12
5.4
4.6
1.2
25
20
25
15
12
10
25
10
2.4
40
30
40
25
20
15
40
15
ns
Ω
42
21
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 15.7 A
V
GS
=
4.5 V, I
D
= 13.2 A
V
DS
= 15 V, I
D
= 15.7 A
50
0.0048
0.0064
82
0.006
0.008
1.15
30
24
-6
2.2
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
Si4156DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
V
GS
= 10
V
thru 4
V
60
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
40
30
20
10
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 3
V
10
T
C
= - 55 °C
6
T
C
= 25 °C
4
2
T
C
= 125 °C
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.010
2100
1800
R
DS(on)
- On-Resistance (Ω)
0.008
V
GS
= 4.5
V
0.006
V
GS
= 10
V
0.004
C - Capacitance (pF)
1500
1200
900
600
300
C
rss
0.002
0
10
20
30
40
50
60
70
0
0
5
Transfer Characteristics
C
iss
C
oss
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 19 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 15
V
1.6
1.8
I
D
= 15.7 A
Capacitance
1.4
(Normalized)
V
GS
= 10
V,
4.5
V
1.2
6
V
DS
= 24
V
4
1.0
2
0.8
0
0
6
12
18
24
30
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
www.vishay.com
3
Si4156DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.015
I
D
= 15.7 A
R
DS(on)
- On-Resistance (Ω)
0.012
I
S
- Source Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
0.009
T
J
= 125 °C
0.006
0.003
T
J
= 25 °C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
2.2
40
50
On-Resistance vs. Gate-to-Source Voltage
2.0
V
GS(th)
(V)
1.8
1.6
1.4
10
Power (W)
I
D
= 250
µA
30
20
1.2
1.0
- 50
0
0.001
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100
µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
*
V
BVDSS
0.1
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
GS
100
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
Si4156DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
6
25
I
D
- Drain Current (A)
Power Dissipation (W)
5
20
4
15
3
10
2
5
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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