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BLF2425M7LS250P11

Description
RF MOSFET Transistors 2.4-2.5GHz 65V 13dB
Categorysemiconductor    Discrete semiconductor   
File Size1015KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors 2.4-2.5GHz 65V 13dB

BLF2425M7LS250P11 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Id - Continuous Drain Current20 mA
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance80 mOhms
TechnologySi
Gain13 dB
Output Power250 W
Mounting StyleSMD/SMT
Package / CaseSOT-539B-5
PackagingTube
Operating Frequency2.4 GHz to 2.5 GHz
Factory Pack Quantity60
Vgs - Gate-Source Voltage13 V
BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
CW
f
(MHz)
2450
V
DS
(V)
28
P
L(AV)
(W)
250
G
p
(dB)
15
D
(%)
51
1.2 Features and benefits
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.

BLF2425M7LS250P11 Related Products

BLF2425M7LS250P11 BLF2425M7L250P112
Description RF MOSFET Transistors 2.4-2.5GHz 65V 13dB
Product Category RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP
RoHS Details Details
Id - Continuous Drain Current 20 mA 20 mA
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Rds On - Drain-Source Resistance 80 mOhms 80 mOhms
Technology Si Si
Gain 13 dB 12 dB
Output Power 250 W 180 W
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-539B-5 SOT-539A-5
Packaging Tube Tube
Operating Frequency 2.4 GHz to 2.5 GHz 2.4 GHz to 2.5 GHz
Factory Pack Quantity 60 60
Vgs - Gate-Source Voltage 13 V 13 V
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