BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
CW
f
(MHz)
2450
V
DS
(V)
28
P
L(AV)
(W)
250
G
p
(dB)
15
D
(%)
51
1.2 Features and benefits
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
BLF2425M7L(S)250P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF2425M7L250P (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF2425M7LS250P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF2425M7L250P
-
Description
flanged balanced ceramic package;
2 mounting holes; 4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
BLF2425M7LS250P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
BLF2425M7L250P_2425M7LS250P#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 11
BLF2425M7L(S)250P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 250 W
Typ
Unit
0.19 K/W
R
th(j-case)
thermal resistance from junction to case
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 2.2 mA
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
39
-
16
0.08
Max
-
2.3
3
-
300
-
-
Unit
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: CW at 2450 MHz; RF performance at V
DS
= 28 V; I
Dq
= 20 mA; T
case
= 25
C; unless
otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
Parameter
power gain
input return loss
drain efficiency
Conditions
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
Min
14
-
46
Typ
15
18
51
Max
-
10
-
Unit
dB
dB
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M7L250P and BLF2425M7LS250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 20 mA; P
L
= 250 W (CW); f = 2450 MHz.
BLF2425M7L250P_2425M7LS250P#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 11
BLF2425M7L(S)250P
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half device. Typical values unless otherwise specified. I
Dq
= 20 mA;
V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
2400
2450
2500
Z
S
()
2.3
6.3j
3.3
6.0j
4.1
6.0j
Z
L
()
3.8
2.7j
2.5
2.9j
3.3
2.3j
drain 1
gate 1
Z
S
gate 2
drain 2
001aak544
Z
L
Fig 1.
Definition of transistor impedance
7.3 Test circuit
C18
C5
C4
C2
C9
C19
C1
C6
C10
R1
C11
R3
C12
C16
C17
C7
C8
C3
C15
R2
C13
C14
aaa-004797
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.76 mm.
See
Table 9
for list of components.
Fig 2.
Component layout for test circuit
BLF2425M7L250P_2425M7LS250P#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 11
BLF2425M7L(S)250P
Power LDMOS transistor
Table 9.
List of components
For test circuit, see
Figure 2.
Component
C1, C2, C3, C11,
C12, C13
C4, C7, C14, C16
C5, C8, C15, C17
C6, C19
C9, C10
C18
R1
R2, R3
Description
multilayer ceramic chip capacitor
SMD capacitor
SMD capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
resistor
resistor
Value
36 pF
470 nF, 50 V
10
F,
50 V
1.4 pF
1.8 pF
470
F,
63 V
9.1
5.1
SMD 0805
SMD 0805
ATC100B
ATC100B
Remarks
ATC800B
7.4 Graphical data
18
G
p
(dB)
15
50
aaa-004798
60
η
D
(%)
G
p
(dB)
18
(3)
aaa-004799
(2)
60
η
D
(%)
50
16
G
p
(3)
(2)
(1)
12
G
p
(1)
(2)
(3)
40
14
(1)
40
9
30
12
η
D
30
6
η
D
3
20
10
20
10
8
10
0
32
36
40
44
48
52
56
P
L
(dBm)
60
0
6
0
50
100
150
200
250
300
P
L
(W)
0
350
V
DS
= 28 V; I
Dq
= 20 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
V
DS
= 28 V; I
Dq
= 20 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 3.
Power gain and drain efficiency as function of
load power; typical values
Fig 4.
Power gain and drain efficiency as function of
load power; typical values
BLF2425M7L250P_2425M7LS250P#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 11
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