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MMBTA43LT1G

Description
Bipolar Transistors - BJT 500mA 200V NPN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMBTA43LT1G Overview

Bipolar Transistors - BJT 500mA 200V NPN

MMBTA43LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionTO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Collector
−Emitter
Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector
−Base
Voltage
MMBTA42, SMMBTA42
MMBTA43
Emitter−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector Current
Continuous
Symbol
V
CEO
Value
300
200
300
200
6.0
6.0
500
Unit
Vdc
1
Vdc
2
SOT−23 (TO−236)
CASE 318
STYLE 6
3
V
CBO
V
EBO
Vdc
I
C
Symbol
P
D
mAdc
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
1D M
G
G
1
M1E M
G
G
R
qJA
P
D
R
qJA
T
J
, T
stg
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
©
Semiconductor Components Industries, LLC, 2012
July, 2012
Rev. 12
1
Publication Order Number:
MMBTA42LT1/D

MMBTA43LT1G Related Products

MMBTA43LT1G MMBTA42LT1
Description Bipolar Transistors - BJT 500mA 200V NPN Bipolar Transistors - BJT 500mA 200V NPN
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code SOT-23 SOT-23
package instruction TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Manufacturer packaging code 318-08 318-08
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.05 A
Collector-emitter maximum voltage 200 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.225 W 0.225 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
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