MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
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COLLECTOR
3
1
BASE
2
EMITTER
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Collector
−Emitter
Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector
−Base
Voltage
MMBTA42, SMMBTA42
MMBTA43
Emitter−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector Current
−
Continuous
Symbol
V
CEO
Value
300
200
300
200
6.0
6.0
500
Unit
Vdc
1
Vdc
2
SOT−23 (TO−236)
CASE 318
STYLE 6
3
V
CBO
V
EBO
Vdc
I
C
Symbol
P
D
mAdc
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
1D M
G
G
1
M1E M
G
G
R
qJA
P
D
R
qJA
T
J
, T
stg
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 12
1
Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L, MMBTA43L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
(V
CB
= 160 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
MMBTA42, SMMBTA42
MMBTA43
f
T
C
cb
50
−
MHz
pF
Both Types
Both Types
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
V
CE(sat)
h
FE
25
40
40
40
−
−
−
−
−
−
−
0.5
0.5
0.9
Vdc
−
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
V
(BR)CEO
300
200
300
200
6.0
−
−
−
−
−
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
Vdc
mAdc
−
−
−
−
0.1
0.1
0.1
0.1
I
EBO
mAdc
V
BE(sat)
Vdc
−
−
3.0
4.0
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MMBTA42L, SMMBTA42L, MMBTA43L
TYPICAL CHARACTERISTICS
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
1.2
I
C
/I
B
= 10
1.0
0.8
0.6
0.4
0.2
−55°C
0.0
0.1
1
10
100
25°C
150°C
T
J
= 150°C
100
25°C
−55°C
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
−55°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
I
C
/I
B
= 10
100
150°C
25°C
0.9
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
I
C
/I
B
= 10
100
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
q
VB
, TEMPERATURE COEFFICIENT (mV/°C)
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
0.1
1
q
VB
, for V
BE
−55°C
to 150°C
10
100
0.1
0.1
V
CE
= 10 V
C, CAPACITANCE (pF)
100
Figure 4. Base−Emitter On Voltage vs.
Collector Current
C
ibo
T
J
= 25°C
f = 1 MHz
10
C
obo
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Base−Emitter Temperature
Coefficient
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3
Figure 6. Capacitance
MMBTA42L, SMMBTA42L, MMBTA43L
TYPICAL CHARACTERISTICS
f
Tau
, CURRENT−GAIN BANDWIDTH (MHz)
100
I
C
, COLLECTOR CURRENT (A)
V
CE
= 20 V
T
J
= 25°C
1
0.1
10 ms
1.0 s
0.01
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0.001
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Current−Gain — Bandwidth Product
Figure 8. Safe Operating Area
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4
MMBTA42L, SMMBTA42L, MMBTA43L
ORDERING INFORMATION
Device Order Number
MMBTA42LT1G
SMMBTA42LT1G
MMBTA42LT3G
SMMBTA42LT3G
MMBTA43LT1G
Package Type
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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