STTH3012
Ultrafast recovery - 1200 V diode
Main product characteristics
A
K
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(typ)
30 A
1200 V
175° C
1.30 V
57 ns
A
K
DO-247
STTH3012W
Features and benefits
■
■
■
■
■
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
A
K
TO-220AC
STTH3012D
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
Part Number
STTH3012D
STTH3012W
Marking
STTH3012D
STTH3012W
March 2006
Rev 1
www.st.com
1/9
9
Characteristics
STTH3012
1
Table 1.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Characteristics
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current,
δ
= 0.5
Repetitive peak forward current
T
c
= 105° C
t
p
= 5 µs, F = 5 kHz square
Value
1200
50
30
300
210
-65 to + 175
175
Unit
V
A
A
A
A
°C
°C
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Table 2.
Thermal parameters
Symbol
R
th(j-c)
Parameter
Junction to case
Value
0.95
Unit
°C/W
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
I
F
= 25 A
1.25
1.20
V
R
= V
RRM
Min.
Typ
Max.
20
µA
15
150
2.1
1.9
1.8
V
2.25
I
F
= 30 A
1.35
1.30
2.05
1.95
Unit
V
F(2)
Forward voltage drop
T
j
= 150° C
T
j
= 25° C
T
j
= 125° C
T
j
= 150° C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 1.60 x I
F(AV)
+ 0.012 I
F2(RMS)
2/9
Characteristics
STTH3012
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
I
RM
(A)
60
55
50
45
40
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
V
R
=600V
T
j
=125°C
35
30
25
20
15
10
I
F
=0.5 x I
F(AV)
t
p
(s)
5
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 5.
t
rr
(ns)
800
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=600V
T
j
=125°C
Figure 6.
Q
rr
(µC)
8
V
R
=600V
T
j
=125°C
Reverse recovery charges versus
dI
F
/dt (typical values)
7
6
5
700
I
F
=2 x I
F(AV)
I
F
=2 x I
F(AV)
600
I
F
=I
F(AV)
I
F
=I
F(AV)
500
I
F
=0.5 x I
F(AV)
4
3
I
F
=0.5 x I
F(AV)
400
2
300
1
200
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
Figure 7.
Softness factor versus dI
F
/dt
(typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
I
F
=I
F(AV)
V
R
=600V
Reference: T
j
=125°C
S factor
3.0
I
F
≤
2xI
F(AV)
V
R
=600V
T
j
=125°C
2.00
1.75
1.50
1.25
S factor
2.5
2.0
1.00
t
rr
1.5
0.75
0.50
I
RM
1.0
0.25
Q
RR
T
j
(°C)
0.5
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
0.00
25
50
75
100
125
4/9
STTH3012
Characteristics
Figure 9.
V
FP
(V)
30
I
F
=I
F(AV)
T
j
=125°C
Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
t
fr
(ns)
1100
1000
900
I
F
=I
F(AV)
V
FR
=1.5 x V
F
max.
T
j
=125°C
25
20
800
700
15
600
10
500
400
5
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
300
200
0
100
dI
F
/dt(A/µs)
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
100
V
R
(V)
10
1
10
100
1000
5/9
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