Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.6
V
GS
= 10 V to 5 V
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
4.5 V
1.2
1.2
1.6
V
DS
≥
10 V
T
J
= −55°C
0.8
4V
0.8
T
J
= 25°C
T
J
= 125°C
0.4
3.5 V
2.5 V
0.4
0
0
1
0
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2
3
4
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
5
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
I
D
= 0.2 A
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1
Figure 2. Transfer Characteristics
V
GS
= 10 V
0.8
T
J
= 125°C
8
6
0.6
T
J
= 25°C
4
0.4
2
0
2.4
0.2
0
0
0.1
0.2
T
J
= −55°C
2.8
3.2
3.6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4
0.3
0.4
0.5
0.6
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
(NORMALIZED)
1.80
1.60
1.40
1.20
1.00
0.80
0.60
−25
I
D
= 0.3 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1000
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
−50
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
50
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
40
5
T
J
= 25°C
I
D
= 0.1 A
V
GS,
GATE−TO−SOURCE VOLTAGE (V)
4
30
C
iss
C
oss
10
C
rss
3
20
2
1
0
0
0.4
0.8
1.2
Q
G
, TOTAL GATE CHARGE (nC)
0
0
4
8
12
16
20
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
1
I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
0.1
0.01
T
J
= 150°C
T
J
= 25°C
0.001
0.4
0.6
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
Figure 9. Diode Forward Voltage vs. Current
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4
NTR4003N, NVR4003N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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